2SK3424

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3424 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES 4.5 V drive available Low on-state resistance RDS(on)1 = 11.5 mΩ MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 24 V, VGS = 10 V) Built-in gate protection diode Surface mount device available ORDERING INFORMATION PART NUMBER PACKAGE 2SK3424 TO-220AB 2SK3424-ZK 2SK3424-ZJ TO-263(MP-25ZK) TO-263(MP-25ZJ) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) VDSS VGSS Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note ID(DC) ID(pulse) Total Power Dissipation (TA = 25°C) PT1 Total Power Dissipation (TC = 25°C) PT2 30 ±20 ±48 ±192 1.5 50 Channel Temperature Storage Temperature Tch 150 Tstg −55 to +150 Note PW ≤ 10 µs, Duty Cycle ≤ 1% V V A A W W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14640EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan T...