2SK3427

Silicon Junction FETs (Small Signal) 2SK3427 Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone I Features High mutual conductance gm Low noise voltage of NV 0.40 +0.10 –0.05 3 12 1.5±0.2 5.8±0.2 2.1±0.1 5˚ Unit: mm 0.12 +0.02 –0.01 2.20±0.15 I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature VDSO VDGO IDSO IDGO IGSO PD Topr Tstg 20 20 2 2 2 200 −20 to +80 −55 to +150 Unit V V mA mA mA mW °C °C (0.95) (0.95) 1.9±0.1 2.9±0.2 10˚ (0.5) 0.7±0.1 Marking Symbol: 5E 1: Drain 2: Source 3: Gate MiniT3-F1 Package I Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Drain current Mutual conductance Noise voltage Voltage gain Voltage gain difference ID VDS = 2.0 V, RD = 2.2 kΩ ± 1% 100 IDSS VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0 107 gm VD = 2.0 V, VGS = 0, f = 1 kHz 660 1 600 NV VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, A-Curve GV1 VD = 2.0 V, RD = 2.2 kΩ ± 1% −7.5 −4.7 CO = 5 pF, eG = 10 mV, f = 1 kHz GV2 VD = 12 V, RD = 2.2 kΩ ± 1% −4.0 −1.5 CO = 5 pF, eG = 10 mV, f = 1 kHz GV3 VD = 1.5 V, RD = 2.2 kΩ ± 1% −8.0 −5.0 CO = 5 pF, eG = 10 mV, f = 1 kHz ∆GV. f* VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz 0 GV2 − GV1 0 GV1 − GV3 0 Note) *: ∆G...