DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP84N06CLD, NP84N06DLD, NP84N06ELD
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL ...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP84N06CLD, NP84N06DLD, NP84N06ELD
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effect
Transistor
designed for high current switching applications.
FEATURES Channel temperature 175 degree rated Super low on-state resistance
RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 5 V, ID = 35 A) Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP84N06CLD
TO-220AB
NP84N06DLD
TO-262
NP84N06ELD
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0)
VDSS
60
Gate to Source Voltage (VDS = 0)
VGSS
±20
Drain Current (DC) Note1
ID(DC)
±84
Drain Current (Pulse) Note2
ID(pulse)
±280
Total Power Dissipation (TA = 25°C)
PT1
1.8
Total Power Dissipation (TC = 25°C)
PT2
185
Channel Temperature
Tch 175
Storage Temperature
Tstg -55 to +175
Single Avalanche Current Note3
IAS Figure4
Single Avalanche Energy Note3
EAS Figure4
Repetitive Avalanche Current Note4
IAR
70
Repetitive Avalanche Energy Note4
EAR
490
V V A A W W °C °C A mJ A mJ
Notes 1. 2. 3. 4.
Package Limit = ± 75 A PW ≤ 10 µs, Duty cycle ≤ 1 % Starting Tch = 25°C, RG = 25 Ω , VGS = 20 V→0 V Tch ≤ 175°C, RG = 25 Ω , VGS = 20 V→0 V, Duty cycle ≤ 3%
THERMAL RESISTANCE Channel to Case Channel to Ambient
Rth(ch-C) Rth(ch-A)
0.81 83.3
°C/W °C/W
The information in this document is subject to change without notice. Before using this...