Document
DCR1700X24
Phase Control Thyristor
DS6037-1 April 2011 (LN28248)
FEATURES
Double Side Cooling High Surge Capability
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches
VOLTAGE RATINGS
Part and Ordering Number
Repetitive Peak Voltages
VDRM and VRRM V
Conditions
DCR1700X24 DCR1700X22 DCR1700X20
2400 2200 2000
Tvj = -40°C to 125°C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM +100V respectively
Lower voltage grades available.
KEY PARAMETERS
VDRM IT(AV) ITSM dV/dt*
dI/dt
2400 V 1700 A 23000 A 1000 V/µs 200 A/µs
* Higher dV/dt selections available
Outline type code: X (See Package Details for further information)
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table.
For example:
DCR1700X24
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order.
Fig. 1 Package outline
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SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value IT Continuous (direct) on-state current
Test Conditions
Half wave resistive load -
DCR1700X24
Max. Units
1700 2670 2400
A A A
SURGE RATINGS
Symbol
Parameter
ITSM Surge (non-repetitive) on-state current I2t I2t for fusing
Test Conditions 10ms half sine, Tcase = 125°C
VR = 0
Max. 23.0 2.65
Units
kA MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c) Rth(c-h)
Tvj Tstg Fm
Thermal resistance – junction to case Double side cooled
Thermal resistance – case to heatsink Double side cooled
Virtual junction temperature
Blocking VDRM / VRRM
Storage temperature range
Clamping force
DC DC
Min.
-40 26
Max. Units
0.018 0.005 125 140
34
°C/W °C/W
°C °C kN
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SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
DCR1700X24
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
dI/dt Rate of rise of on-state current
From 67% VDRM to 2000A Repetitive 50Hz
Gate source 30V, 10,
Non-repetitive
tr < 0.5µs, Tj = 125°C
VT VT(TO)
rT
On-state voltage Threshold voltage – Low level On-state slope resistance – Low level
IT = 3000A, Tcase = 125°C Tcase = 125°C Tcase = 125°C
tgd Delay time
VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C
tq Turn-off time
Tj = 125°C, VR = 100V, dI/dt = 10A/µs,
dVDR/dt = 20V/µs linear to 67% VDRM
QS Stored charge IRR Reverse recovery current IL Latching current
IT = 2000A, tp = 1000us,Tj = 125°C, dI/dt =10A/µs,
Tj = 25°C,
1000
-
-
-
-
150 -
200 1000
1.65 0.96 0.23 3.0
300
3500 170
1
IH Holding current
Tj = 25°C,
- 200
mA V/µs A/µs A/µs
V V m µs
µs
µC A A mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT Gate trigger voltage VGD Gate non-tr.