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DCR1700X24 Dataheets PDF



Part Number DCR1700X24
Manufacturers DYNEX
Logo DYNEX
Description Phase Control Thyristor
Datasheet DCR1700X24 DatasheetDCR1700X24 Datasheet (PDF)

DCR1700X24 Phase Control Thyristor DS6037-1 April 2011 (LN28248) FEATURES  Double Side Cooling  High Surge Capability APPLICATIONS  High Power Drives  High Voltage Power Supplies  Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V Conditions DCR1700X24 DCR1700X22 DCR1700X20 2400 2200 2000 Tvj = -40°C to 125°C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM +100V respectively Lower voltage grades available. KEY .

  DCR1700X24   DCR1700X24



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DCR1700X24 Phase Control Thyristor DS6037-1 April 2011 (LN28248) FEATURES  Double Side Cooling  High Surge Capability APPLICATIONS  High Power Drives  High Voltage Power Supplies  Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V Conditions DCR1700X24 DCR1700X22 DCR1700X20 2400 2200 2000 Tvj = -40°C to 125°C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM +100V respectively Lower voltage grades available. KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 2400 V 1700 A 23000 A 1000 V/µs 200 A/µs * Higher dV/dt selections available Outline type code: X (See Package Details for further information) ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1700X24 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. Fig. 1 Package outline www.dynexsemi.com 1/10 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value IT Continuous (direct) on-state current Test Conditions Half wave resistive load - DCR1700X24 Max. Units 1700 2670 2400 A A A SURGE RATINGS Symbol Parameter ITSM Surge (non-repetitive) on-state current I2t I2t for fusing Test Conditions 10ms half sine, Tcase = 125°C VR = 0 Max. 23.0 2.65 Units kA MA2s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Rth(j-c) Rth(c-h) Tvj Tstg Fm Thermal resistance – junction to case Double side cooled Thermal resistance – case to heatsink Double side cooled Virtual junction temperature Blocking VDRM / VRRM Storage temperature range Clamping force DC DC Min. -40 26 Max. Units 0.018 0.005 125 140 34 °C/W °C/W °C °C kN www.dynexsemi.com 2/9 SEMICONDUCTOR DYNAMIC CHARACTERISTICS DCR1700X24 Symbol Parameter Test Conditions Min. Max. Units IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open dI/dt Rate of rise of on-state current From 67% VDRM to 2000A Repetitive 50Hz Gate source 30V, 10, Non-repetitive tr < 0.5µs, Tj = 125°C VT VT(TO) rT On-state voltage Threshold voltage – Low level On-state slope resistance – Low level IT = 3000A, Tcase = 125°C Tcase = 125°C Tcase = 125°C tgd Delay time VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 100V, dI/dt = 10A/µs, dVDR/dt = 20V/µs linear to 67% VDRM QS Stored charge IRR Reverse recovery current IL Latching current IT = 2000A, tp = 1000us,Tj = 125°C, dI/dt =10A/µs, Tj = 25°C, 1000 - - - - 150 - 200 1000 1.65 0.96 0.23 3.0 300 3500 170 1 IH Holding current Tj = 25°C, - 200 mA V/µs A/µs A/µs V V m µs µs µC A A mA GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter VGT Gate trigger voltage VGD Gate non-tr.


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