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DCR1800F18 Dataheets PDF



Part Number DCR1800F18
Manufacturers DYNEX
Logo DYNEX
Description Phase Control Thyristor
Datasheet DCR1800F18 DatasheetDCR1800F18 Datasheet (PDF)

DCR1800F18 Phase Control Thyristor DS6067 June 2011 (LN28484) FEATURES  Double Side Cooling  High Surge Capability APPLICATIONS  High Power Drives  High Voltage Power Supplies  Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V Conditions DCR1800F18 DCR1800F16 DCR1800F14 DCR1800F12 1800 1600 1400 1200 Tvj = -40°C to 125°C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM +100V respectively Lower voltage grades ava.

  DCR1800F18   DCR1800F18


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DCR1800F18 Phase Control Thyristor DS6067 June 2011 (LN28484) FEATURES  Double Side Cooling  High Surge Capability APPLICATIONS  High Power Drives  High Voltage Power Supplies  Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V Conditions DCR1800F18 DCR1800F16 DCR1800F14 DCR1800F12 1800 1600 1400 1200 Tvj = -40°C to 125°C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM +100V respectively Lower voltage grades available. KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 1800 V 1800 A 32000 A 1000 V/µs 200 A/µs * Higher dV/dt selections available Outline type code: F (See Package Details for further information) ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1800F18 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. Fig. 1 Package outline www.dynexsemi.com 1/10 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value IT Continuous (direct) on-state current Test Conditions Half wave resistive load - DCR1800F18 Max. Units 1800 2820 2550 A A A SURGE RATINGS Symbol Parameter ITSM Surge (non-repetitive) on-state current I2t I2t for fusing Test Conditions 10ms half sine, Tcase = 125°C VR = 0 Max. 32.0 5.12 Units kA MA2s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Rth(j-c) Rth(c-h) Tvj Tstg Fm Thermal resistance – junction to case Double side cooled Thermal resistance – case to heatsink Double side cooled Virtual junction temperature Blocking VDRM / VRRM Storage temperature range Clamping force DC DC Min. -40 18 Max. Units 0.02 0.005 125 140 26 °C/W °C/W °C °C kN www.dynexsemi.com 2/9 SEMICONDUCTOR DYNAMIC CHARACTERISTICS DCR1800F18 Symbol Parameter Test Conditions Min. Max. Units IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open dI/dt Rate of rise of on-state current From 67% VDRM to 2000A Repetitive 50Hz Gate source 30V, 10, Non-repetitive tr < 0.5µs, Tj = 125°C VT VT(TO) rT On-state voltage Threshold voltage – Low level On-state slope resistance – Low level IT = 2000A, Tcase = 125°C Tcase = 125°C Tcase = 125°C tgd Delay time VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 100V, dI/dt = 10A/µs, dVDR/dt = 20V/µs linear to 67% VDRM QS Stored charge IRR Reverse recovery current IL Latching current IT = 2000A, tp = 1000us,Tj = 125°C, dI/dt =10A/µs, Tj = 25°C, 1000 - - - - 150 - 200 1000 1.20 0.84 0.18 3.0 250 2500 150 1 IH Holding current Tj = 25°C, - 200 mA V/µs A/µs A/µs V V m µs µs µC A A mA GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter VGT Gate trigger voltage VGD Gate non-trigger voltage IGT Gate trigger current IGD Gate non-trigger current Test Conditions VDRM = 5V, Tcase = 25°C At 40% VDRM, Tcase = 125°C VDRM = 5V, Tcase = 25°C At 40% VDRM, Tcase = 125°C Max. Units 3 TBD 300 TBD V V mA mA www.dynexsemi.com 3/9 SEMICONDUCTOR DCR1800F18 CURVES Instantaneous on-state current, IT - (A) 10000 9000 8000 7000 VTM EQUATION 6000 5000 VTM = A + Bln (IT) + C.IT+D.IT 4000 3000 2000 1000 0 Tj=25°C Tj=125°C 0.6 1.2 1.8 2.4 Instantaneous on-state voltage,VT - (V) Where A = 0.483282 B = 0.0343837 C = 0.000112062 D = 0.0052454 These values are valid for Tj = 125°C Fig.2 Maximum &minimum on-state characteristics Thermal Impedance Zth(j-c) (°C/W) 0.03 Double side cooled 0.02   Rthjc t  n i 1 Rthi  1  e t i   i τi (s) Rthi (°C/kW) 1 0.6894 13.267 0.01 2 0.0872 4.05 3 0.0217 1.585 4 0.0043 1.102 0 0.001 0.01 0.1 1 Time ( s ) 10 100 Fig.3 Maximum (limit) transient thermal impedance – junction to case (°C/W) www.dynexsemi.com 4/9 Mean power dissipation - (W) SEMICONDUCTOR DCR1800F18 4000 3000 2000 1000 0 0 400 800 1200 1600 Mean on-state current, IT(AV) - (A) 180 120 90 60 30 2000 Fig.4 On-state power dissipation – sine wave 130 120 110 100 90 80 70 60 50 40 d.c. 30 180 20 120 90 10 60 0 30 0 400 800 1200 1600 Mean on-state current, IT(AV) - (A) 2000 Fig.6 Maximum permissible case temperature, double side cooled – rectangular wave Mean power dissipation - (W) Maximum case temperature, Tcase - (°C) 130 120 110 100 90 80 70 60 50 40 30 180 20 120 90 10 60 0 30 0 400 800 1200 1600 Mean on-state current, IT(AV) - (A) 2000 Fig.5 Maximum permissible case temperature, double side cooled – sine wave 4000 3000 d.c. 180 120 90 60 30 2000 1000 0 0 400 800 1200 1600 2000 Mean on-state current, IT(AV) - (A) Fig.7 On-state power dissipation – rectangular wave Maximum case temperature, Tcase - (°C) www.dynexsemi.com 5/9 Surge current,.


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