Document
DCR1800F18
Phase Control Thyristor
DS6067 June 2011 (LN28484)
FEATURES
Double Side Cooling High Surge Capability
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches
VOLTAGE RATINGS
Part and Ordering Number
Repetitive Peak Voltages
VDRM and VRRM V
Conditions
DCR1800F18 DCR1800F16 DCR1800F14 DCR1800F12
1800 1600 1400 1200
Tvj = -40°C to 125°C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM +100V respectively
Lower voltage grades available.
KEY PARAMETERS
VDRM IT(AV) ITSM dV/dt*
dI/dt
1800 V 1800 A 32000 A 1000 V/µs 200 A/µs
* Higher dV/dt selections available
Outline type code: F (See Package Details for further information)
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table.
For example:
DCR1800F18
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order.
Fig. 1 Package outline
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SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value IT Continuous (direct) on-state current
Test Conditions
Half wave resistive load -
DCR1800F18
Max. Units
1800 2820 2550
A A A
SURGE RATINGS
Symbol
Parameter
ITSM Surge (non-repetitive) on-state current I2t I2t for fusing
Test Conditions 10ms half sine, Tcase = 125°C
VR = 0
Max. 32.0 5.12
Units
kA MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c) Rth(c-h)
Tvj Tstg Fm
Thermal resistance – junction to case Double side cooled
Thermal resistance – case to heatsink Double side cooled
Virtual junction temperature
Blocking VDRM / VRRM
Storage temperature range
Clamping force
DC DC
Min.
-40 18
Max. Units
0.02 0.005 125 140
26
°C/W °C/W
°C °C kN
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SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
DCR1800F18
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
dI/dt Rate of rise of on-state current
From 67% VDRM to 2000A Repetitive 50Hz
Gate source 30V, 10,
Non-repetitive
tr < 0.5µs, Tj = 125°C
VT VT(TO)
rT
On-state voltage Threshold voltage – Low level On-state slope resistance – Low level
IT = 2000A, Tcase = 125°C Tcase = 125°C Tcase = 125°C
tgd Delay time
VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C
tq Turn-off time
Tj = 125°C, VR = 100V, dI/dt = 10A/µs,
dVDR/dt = 20V/µs linear to 67% VDRM
QS Stored charge IRR Reverse recovery current IL Latching current
IT = 2000A, tp = 1000us,Tj = 125°C, dI/dt =10A/µs,
Tj = 25°C,
1000
-
-
-
-
150 -
200 1000
1.20 0.84 0.18 3.0
250
2500 150
1
IH Holding current
Tj = 25°C,
- 200
mA V/µs A/µs A/µs
V V m µs
µs
µC A A mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT Gate trigger voltage VGD Gate non-trigger voltage IGT Gate trigger current IGD Gate non-trigger current
Test Conditions
VDRM = 5V, Tcase = 25°C At 40% VDRM, Tcase = 125°C VDRM = 5V, Tcase = 25°C At 40% VDRM, Tcase = 125°C
Max. Units
3 TBD 300 TBD
V V mA mA
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SEMICONDUCTOR
DCR1800F18
CURVES
Instantaneous on-state current, IT - (A)
10000
9000
8000
7000 VTM EQUATION
6000
5000 VTM = A + Bln (IT) + C.IT+D.IT
4000
3000
2000
1000 0
Tj=25°C Tj=125°C
0.6 1.2 1.8 2.4 Instantaneous on-state voltage,VT - (V)
Where A = 0.483282 B = 0.0343837 C = 0.000112062 D = 0.0052454
These values are valid for Tj = 125°C
Fig.2 Maximum &minimum on-state characteristics
Thermal Impedance Zth(j-c) (°C/W)
0.03 Double side cooled
0.02
Rthjc t
n i 1
Rthi
1
e
t i
i τi (s)
Rthi (°C/kW)
1 0.6894
13.267
0.01
2 0.0872
4.05
3 0.0217
1.585
4 0.0043
1.102
0 0.001
0.01 0.1
1
Time ( s )
10 100
Fig.3 Maximum (limit) transient thermal impedance – junction to case (°C/W)
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Mean power dissipation - (W)
SEMICONDUCTOR
DCR1800F18
4000
3000
2000
1000
0 0
400 800 1200 1600 Mean on-state current, IT(AV) - (A)
180 120 90 60 30
2000
Fig.4 On-state power dissipation – sine wave
130
120
110
100
90
80
70
60
50
40
d.c.
30 180
20
120 90
10 60
0 30
0 400 800 1200 1600 Mean on-state current, IT(AV) - (A)
2000
Fig.6 Maximum permissible case temperature, double side cooled – rectangular wave
Mean power dissipation - (W)
Maximum case temperature, Tcase - (°C)
130
120
110
100
90
80
70
60
50
40
30 180
20
120 90
10 60
0 30
0 400 800 1200 1600 Mean on-state current, IT(AV) - (A)
2000
Fig.5 Maximum permissible case temperature, double side cooled – sine wave
4000 3000
d.c. 180 120 90 60 30
2000
1000
0
0 400 800 1200 1600 2000 Mean on-state current, IT(AV) - (A)
Fig.7 On-state power dissipation – rectangular wave
Maximum case temperature, Tcase - (°C)
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Surge current,.