RT5N14BC

PRELIMINARY RT5N14BC Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT5N14BC is a one chip transistor with built-in bias resistor, PNP type is RT5P14BC. OUTLINE DRAWING 0.65 2.8 1.5 0.65 FEATURE Built-in bias resistor （R=10kΩ） High collector current （Ic=0.5A） Mini package for easy mounting ① ②③ 2.8 1.90 0.95 0.95 0.4 Unit: mm APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit 1.1 0.8 0～0.1 0.13 C (OUT) JEITA：SC-59 B (IN) R JEDEC：Similar to TO-236 Terminal Connector ①：BASE E (GND) ②：EMITTER ③：COLLECTOR MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RATING 50 5 50 500 200 ＋150 -55～＋150 UNIT V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER ＶCEO ICBO IEBO VCE(sat) GI R fT C to E break down voltage Collector cut off current Emitter cut off current C to E saturation voltage DC forward current gain Emitter-base resistor Gain band width product TEST CONDITION IC=1mA VCB=50V VEB=5V IC=50mA，IB=2.5mA VCE=5V，IE=100mA ― VCE=10V，IE=-5mA，f=100MHz MARKING N.C MIN 50 ― 0.385 ― 56 7 ― LIMIT TYP ― ― ― ― ― 10 150 MAX ― 0.5 0.714 0.3 ― 13 ― UNIT V μA mA V ― kΩ MHz ISAHAYA ELECTRONICS CORPORATION COLLECコTレORクタDISSIPPAc(TImOW)N Pc(mW) PRELIMINARY TYPICAL CHARACTERISTICS (Ta=25℃) コCレO...