RU190N08S

RU190N08S N-Channel Advanced Power MOSFET Features · 80V/190A RDS (ON)=3.9mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Pin Description TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy ,Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 80 ±25 175 -55 to 175 ① 190 ② 700 ① 190 ① 140 312 156 0.48 1225 Unit V °C °C A A W °C/W mJ Copyright Ruichips Semiconductor Co., Ltd Rev. E – MAR., 2013 www.ruichips.com RU190N08S Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU190N08S Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS= 80V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±25V, VDS=0V ④ RDS(ON) Drain-Source On-state Resista...