RU20120L

RU20120L N-Channel Advanced Power MOSFET Features 20V/120A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications Power Management DC-DC Converters TO252 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012 1 N-Channel MOSFET Rating Unit TC=25°C 20 ±20 175 -55 to 175 120 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480 A 120 A 93 103 W 52 1.45 °C/W 100 °C/W 64 mJ www.ruichips.com RU20120L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20120L Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=20V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage C...