RU3040M2

RU3040M2 N-Channel Advanced Power MOSFET Features 30V/40A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V RDS (ON) =8.2mΩ(Typ.)@VGS=4.5V RDS (ON) =16.8mΩ(Typ.) @VGS=2.5V Super High Dense Cell Design Fast Switching Speed Low gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems Pin Description D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA S N-Channel MOSFET Rating Unit TC=25°C 30 ±10 150 -55 to 150 40 V °C °C A TC=25°C 160 A TC=25°C 40 TC=100°C 25 A TA=25°C 13 TA=70°C 11 TC=25°C 31 TC=100°C 13 W TA=25°C 3.5 TA=70°C 2.3 Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 1 www.ruichips.com RU3040M2 Symbol Parameter Rating Unit RθJC ③ RθJA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 4 35 Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed 90 Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3040M2 Min. Typ. Max. Static Ch...