N-Channel Advanced Power MOSFET
RU306C
N-Channel Advanced Power MOSFET
Features
• 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4...
Description
RU306C
N-Channel Advanced Power MOSFET
Features
30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ VGS=2.5V
Low RDS (ON) Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Available
Applications
DC/DC Converter Load Switch
Pin Description
SOT23-3
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RJA
Continuous Drain Current(VGS=10V)
TA=25°C TA=70°C
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
30 ±12 150 -55 to 150 1.3
①
20 5 3.8 1.25 0.8 100
Unit
V °C °C A
A A
W °C/W
Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2012
www.ruichips.com
RU306C
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU306C Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current
RDS(ON)③ Drain-Source On-state Resistance
VGS=0V, IDS=250A VDS=30V, VGS=0V
TJ=85°C VDS=VGS, IDS=250A VGS=±12V, VDS=0V VGS=10V, IDS=6A
VGS=4.5V, IDS=5A
VGS=2.5V, IDS=4A
30 0.6
1 30 1 1.5 ±100 30 35
38 42
110 150
Unit...
Similar Datasheet