RU3090M

RU3090M N-Channel Advanced Power MOSFET Features 30V/98A, RDS (ON) =1.7mΩ(Typ.)@VGS=10V RDS (ON) =3.2mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description PDFN5060 Applications DC/DC Conversion Switching Application Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev. A– APR., 2012 N-Channel MOSFET TC=25°C TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C Rating Unit 30 ±20 150 -55 to 150 50 V °C °C A ② 380 ① 98 ① 68 ③ 29 ③ 23 66 26 ③ 4.2 ③ 2.7 A A W www.ruichips.com RU3090M Mounted on Large Heat Sink RθJC ③ RθJA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed 1.9 °C/W 30 °C/W 256 mJ Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3090M Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Lea...