RU40120M

RU40120M N-Channel Advanced Power MOSFET Features 40V/120A, RDS (ON) =2.7mΩ(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Converters Power Supply Pin Description D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA S N-Channel MOSFET Rating Unit TC=25°C 40 ±20 150 -55 to 150 50 V °C °C A TC=25°C 480 A TC=25°C 120 TC=100°C 75 A TA=25°C 21 TA=70°C 17 TC=25°C 96 TC=100°C 38 W TA=25°C 4.2 TA=70°C 2.7 Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013 1 www.ruichips.com RU40120M Symbol Parameter Rating Unit RθJC Thermal Resistance-Junction to Case ③ RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings 1.3 30 EAS④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) 400 Symbol Parameter Test Condition RU40120M Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Volta...