RU6051K

RU6051K N-Channel Advanced Power MOSFET Features 60V/50A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =12mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS Pin Description GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– OCT., 2013 1 S N-Channel MOSFET Rating Unit TC=25°C 60 ±20 175 -55 to 175 50 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 200 A 50 A 36 71 W 36 2.1 °C/W 100 °C/W 100 mJ www.ruichips.com RU6051K Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6051K Min. Typ. Max. Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)④ Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0...