N-Channel Advanced Power MOSFET
RU7080L
N-Channel Advanced Power MOSFET
Features
• 70V/80A,
RDS (ON) =5.7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Desig...
Description
RU7080L
N-Channel Advanced Power MOSFET
Features
70V/80A,
RDS (ON) =5.7mΩ(Typ.)@VGS=10V
Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
D
Applications
Power Supply
G S
TO252
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
70 ±25 175 -55 to 175 80
V
°C °C A
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
320 A
80 A
56
125 W
62.5
1.2 °C/W
100 °C/W
225 mJ
Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013
1
www.ruichips.com
RU7080L
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU7080L Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS=70V, VGS=0V IDSS Zero Gate Voltage Drain Current
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON)④ Drain-Source On-state Resistanc...
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