RU75110Q

RU75110Q N-Channel Advanced Power MOSFET Features 75V/110A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications High Speed Power Switching UPS Pin Description G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 1 S N-Channel MOSFET Rating Unit TC=25°C 75 ±25 175 -55 to 175 110 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 440 A 110 A 82 192 W 96 0.78 °C/W 50 °C/W 400 mJ www.ruichips.com RU75110Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU75110Q Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=75V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, ID...