RU8590S

RU8590S N-Channel Advanced Power MOSFET Features 85V/90A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications High Speed Power Switching UPS Pin Description D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 85 ±25 175 -55 to 175 90 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 360 A 90 A 64 188 W 94 0.8 °C/W 62.5 °C/W 306 mJ Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2015 1 www.ruichips.com RU8590S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU8590S Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=85V, VGS=0V TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS...