VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 1 A
DO-204AL
Cathode
Anode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max. TJ max. Diode variation
EAS
DO-204AL (DO-41) 1A
50 V, 60 V 0.65 V
10.0 mA at 125 °C 150 °C
Single die 2.0 mJ
FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition (-M3 only)
DESCRIPTION
The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM IFSM
tp = 5 μs sine
VF 1 Apk, TJ = 125 °C
TJ Range
VALUES 1.0
50/60 150 0.65 - 40 to 150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage VRWM
VS-MBR150 50
VS-MBR150-M3 50
VS-MBR160 60
VS-MBR160-M3 UNITS 60 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current See fig. 4
IF(AV)
Maximum peak one cycle non-repetitive surge current See fig. 6
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 75 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 1 A, L = 4 mH
Current decaying linearly to zero in 1 μs Frequency limited by, TJ maximum VA = 1.5 x VR typical
VALUES 1.0
150 25 2.0 1.0
UNITS
A
mJ A
Revision: 20-Sep-11
1 Document Number: 93439
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop See fig. 1
VFM (1)
Maximum reverse leakage current See fig. 2
IRM (1)
Typical junction capacitance Typical series inductance Maximum voltage rate of change
CT LS dV/dt
Note (1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
1A
2 A TJ = 25 °C 3A
1A
2 A TJ = 125 °C 3A
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES 0.75 0.9 1.0 0.65 0.75 0.82 0.5 5 10 55 8.0
10 000
UNITS
V
mA pF nH V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TJ (1), TStg
Maximum thermal resistance, junction to lead
RthJL (2)
DC operation See fig. 4
TEST CONDITIONS
Approximate weight
Marking device
Case style DO-204AL (DO-41)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink dTJ RthJA
(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
VALUES - 40 to 150
UNITS °C
80 °C/W
0.33 g
0.012
oz.
MBR150
MBR160
Revision: 20-Sep-11
2 Document Number: 93439
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
www.vishay.com
Vishay Semiconductors
IF - Instantaneous Forward Current (A)
10
1
TJ = 150 °C TJ = 125 °C TJ = 25 °C
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
93439_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
IR - Reverse Current (mA)
10 TJ = 150 °C 1 TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001 0 10 20 30 40 50 60 70
93439_02
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
100
TJ = 25 °C
160
Allowable Lead Temperature (°C)
140 120 DC
100
80
60
40
20
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
93439_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current, Printed Circuit Board Mounted
1
Average Power Loss (W)
0.8
0.6 RMS Limit
0.4
0.2
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
93439_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With rated VRRM Applied.