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VS-MBR150 Dataheets PDF



Part Number VS-MBR150
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-MBR150 DatasheetVS-MBR150 Datasheet (PDF)

VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A DO-204AL Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS DO-204AL (DO-41) 1A 50 V, 60 V 0.65 V 10.0 mA at 125 °C 150 °C Single die 2.0 mJ FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and mois.

  VS-MBR150   VS-MBR150



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VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A DO-204AL Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS DO-204AL (DO-41) 1A 50 V, 60 V 0.65 V 10.0 mA at 125 °C 150 °C Single die 2.0 mJ FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for commercial level • Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM IFSM tp = 5 μs sine VF 1 Apk, TJ = 125 °C TJ Range VALUES 1.0 50/60 150 0.65 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-MBR150 50 VS-MBR150-M3 50 VS-MBR160 60 VS-MBR160-M3 UNITS 60 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS 50 % duty cycle at TC = 75 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 1 A, L = 4 mH Current decaying linearly to zero in 1 μs Frequency limited by, TJ maximum VA = 1.5 x VR typical VALUES 1.0 150 25 2.0 1.0 UNITS A mJ A Revision: 20-Sep-11 1 Document Number: 93439 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop See fig. 1 VFM (1) Maximum reverse leakage current See fig. 2 IRM (1) Typical junction capacitance Typical series inductance Maximum voltage rate of change CT LS dV/dt Note (1) Pulse width < 300 μs, duty cycle < 2 % TEST CONDITIONS 1A 2 A TJ = 25 °C 3A 1A 2 A TJ = 125 °C 3A TJ = 25 °C TJ = 100 °C VR = Rated VR TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.75 0.9 1.0 0.65 0.75 0.82 0.5 5 10 55 8.0 10 000 UNITS V mA pF nH V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to lead RthJL (2) DC operation See fig. 4 TEST CONDITIONS Approximate weight Marking device Case style DO-204AL (DO-41) Notes (1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink dTJ RthJA (2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package VALUES - 40 to 150 UNITS °C 80 °C/W 0.33 g 0.012 oz. MBR150 MBR160 Revision: 20-Sep-11 2 Document Number: 93439 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors IF - Instantaneous Forward Current (A) 10 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 93439_01 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 100 IR - Reverse Current (mA) 10 TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 0.001 TJ = 25 °C 0.0001 0 10 20 30 40 50 60 70 93439_02 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 TJ = 25 °C 160 Allowable Lead Temperature (°C) 140 120 DC 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 93439_04 IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Ambient Temperature vs. Average Forward Current, Printed Circuit Board Mounted 1 Average Power Loss (W) 0.8 0.6 RMS Limit 0.4 0.2 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 93439_05 Average Forward Current - IF(AV) (A) Fig. 5 - Forward Power Loss Characteristics 1000 At Any Rated Load Condition And With rated VRRM Applied.


VS-85CNQ015APbF VS-MBR150 VS-MBR150-M3


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