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VS-MBRS130TRPbF Dataheets PDF



Part Number VS-MBRS130TRPbF
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-MBRS130TRPbF DatasheetVS-MBRS130TRPbF Datasheet (PDF)

www.vishay.com VS-MBRS130TRPbF Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A Cathode Anode SMB PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS SMB 1.0 A 30 V 0.42 V 15 mA at 125 °C 125 °C Single die 3.0 mJ FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Desi.

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www.vishay.com VS-MBRS130TRPbF Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A Cathode Anode SMB PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS SMB 1.0 A 30 V 0.42 V 15 mA at 125 °C 125 °C Single die 3.0 mJ FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-MBRS130TRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM IFSM tp = 5 μs sine VF 1.0 Apk, TJ = 125 °C TJ Range VALUES 1.0 30 230 0.42 -55 to +125 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-MBRS130TRPbF 30 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle  non-repetitive surge current, TJ = 25 °C IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS 50 % duty cycle at TL = 106 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 1 A, L = 6 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical VALUES 1.0 870 50 3.0 1.0 UNITS A mJ A Revision: 03-Feb-15 1 Document Number: 94318 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-MBRS130TRPbF Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM (1) Maximum reverse leakage current IRM (1) Maximum junction capacitance Typical series inductance Maximum voltage rate of change CT LS dV/dt Note (1) Pulse width < 300 μs, duty cycle < 2 % TEST CONDITIONS 1A TJ = 25 °C 2A 1A TJ = 125 °C 2A TJ = 25 °C TJ = 100 °C VR = Rated VR TJ = 125 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.6 0.67 0.42 0.52 0.5 5.0 15 200 2.0 10 000 UNITS V mA pF nH V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ (1) Maximum storage temperature range Maximum thermal resistance,  junction to lead Maximum thermal resistance,  junction to ambient TStg RthJL (2) RthJA DC operation Approximate weight Marking device Case style SMB (similar to DO-214AA) Notes (1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink dTJ RthJA (2) Mounted 1" square PCB VALUES -55 to +125 -55 to +150 UNITS °C 25 °C/W 80 0.10 0.003 13 g oz. Revision: 03-Feb-15 2 Document Number: 94318 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) www.vishay.com 10 TJ = 125 °C TJ = 25 °C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 1.0 0.1 0.01 0.001 TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 0.0001 0 10 20 30 VR - Reverse Voltage (V) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage 1000 Average Power Loss (W) Allowable Lead Temperature (°C) VS-MBRS130TRPbF Vishay Semiconductors 130 DC 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 90 Square wave (D = 0.50) Rated VR applied 80 See note (1) 70 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature 0.7 0.6 RMS limit 0.5 0.4 D = 0.20 0.3 D = 0.25 D = 0.33 0.2 D = 0.50 D = 0.75 0.1 DDCC 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current 1000 IR - Reverse Current (mA) IFSM - Non-Repetitive Surge Current (A) CT - Junction Capacitance (pF) TJ = 25 °C 100 100 At any rated load condition and with rated VRRM applied following surge 10 0 10 20 30 10 10 100 .


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