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VS-MBRS130TRPbF
Vishay Semiconductors
High Performance Schottky Rectifier, 1.0 A
Cathode Anode
SMB
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max. TJ max. Diode variation
EAS
SMB 1.0 A 30 V 0.42 V 15 mA at 125 °C 125 °C Single die 3.0 mJ
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION The VS-MBRS130TRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 1.0 Apk, TJ = 125 °C TJ Range
VALUES 1.0 30 230 0.42
-55 to +125
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-MBRS130TRPbF 30
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle non-repetitive surge current, TJ = 25 °C
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TL = 106 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 1 A, L = 6 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES 1.0 870 50 3.0
1.0
UNITS
A
mJ A
Revision: 03-Feb-15
1 Document Number: 94318
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-MBRS130TRPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Maximum junction capacitance Typical series inductance Maximum voltage rate of change
CT LS dV/dt
Note (1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
1A TJ = 25 °C
2A
1A TJ = 125 °C
2A
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES 0.6 0.67 0.42 0.52 0.5 5.0 15 200 2.0
10 000
UNITS
V
mA pF nH V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ (1)
Maximum storage temperature range
Maximum thermal resistance, junction to lead Maximum thermal resistance, junction to ambient
TStg RthJL (2)
RthJA
DC operation
Approximate weight
Marking device
Case style SMB (similar to DO-214AA)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink dTJ RthJA
(2) Mounted 1" square PCB
VALUES -55 to +125 -55 to +150
UNITS °C
25 °C/W
80
0.10 0.003
13
g oz.
Revision: 03-Feb-15
2 Document Number: 94318
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IF - Instantaneous Forward Current (A)
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10
TJ = 125 °C TJ = 25 °C 1.0
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 1.0 0.1 0.01 0.001
TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C
TJ = 25 °C
0.0001 0 10 20 30
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
1000
Average Power Loss (W)
Allowable Lead Temperature (°C)
VS-MBRS130TRPbF
Vishay Semiconductors
130 DC
120
110
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
100
90 Square wave (D = 0.50) Rated VR applied
80 See note (1)
70 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature
0.7
0.6 RMS limit
0.5
0.4 D = 0.20
0.3 D = 0.25 D = 0.33
0.2 D = 0.50 D = 0.75
0.1 DDCC
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
IR - Reverse Current (mA)
IFSM - Non-Repetitive Surge Current (A)
CT - Junction Capacitance (pF)
TJ = 25 °C 100
100
At any rated load condition
and with rated VRRM applied following surge
10 0 10 20 30
10 10
100
.