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SSE08N60SL Dataheets PDF



Part Number SSE08N60SL
Manufacturers SeCoS
Logo SeCoS
Description N-Ch Enhancement Mode Power MOSFET
Datasheet SSE08N60SL DatasheetSSE08N60SL Datasheet (PDF)

Elektronische Bauelemente SSE08N60SL 8A , 600V , RDS(ON) 1.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE08N60SL is an N-channel enhancement mode power MOS field effect transistor which is produced. The improved planar strip cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche a.

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Elektronische Bauelemente SSE08N60SL 8A , 600V , RDS(ON) 1.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE08N60SL is an N-channel enhancement mode power MOS field effect transistor which is produced. The improved planar strip cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES 8A, 600V, RDS(ON)(TYP.)=0.96Ω@VGS=10V Low Gate Charge Low Crss Fast Switching Improved dv/dt Capability 1 Gate 2 Drain 3 Source TO-220P REF. A B C D E F G Millimeter Min. Max. 9.3 10.6 14.2 16.5 2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8 REF. H I J K L M Millimeter Min. Max. 2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.7 5.8 7.0 1.0 1.45 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 8 5 Pulsed Drain Current IDM 32 Total Power Dissipation Single Pulse Avalanche Energy 1 TC=25°C Derate above 25°C PD EAS 147 1.18 450 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient RθJA 62.5 Maximum Thermal Resistance Junction-Case Notes: 1. L=30mH,IAS=5A, VDD=110V, RG=25Ω, Starting TJ =25°C RθJC 0.85 Unit V V A A A W °C / W mJ °C °C / W °C / W http://www.SeCoSGmbH.com/ 09-Jul-2014 Rev. A Any changes of specification will not be informed individually. Page 1 of 5 Elektronische Bauelemente SSE08N60SL 8A , 600V , RDS(ON) 1.2Ω N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage BVDSS 600 - - V VGS=0, ID= 250µA VGS(th) 2 - 4 V VDS=VGS, ID=250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±30V, VDS=0V Drain-Source Leakage Current IDSS - - 1 µA VDS=600V, VGS=0V Static Drain-Source On-Resistance Total Gate Charge 1.2 Gate-Source Charge 1.2 Gate-Drain Change 1.2 Turn-on Delay Time 1.2 Rise Time 1.2 Turn-off Delay Time 1.2 Fall Time 1.2 Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - 0.96 1.2 Ω VGS=10V, ID=4A - 14.83 - 5.9 -4- ID=8A nC VDS=480V VGS=10V - 29 - - 71.33 - 34.93 - VDD=300V nS ID=8A RG=25 Ω - 32.8 - - 910 - 105 - 2.43 - VGS =0 pF VDS=25V f =1.0MHz Source-Drain Diode Diode Forward Voltage Continuous Source Current Pulsed Source Current VSD - - 1.4 V IS=8A, VGS=0 IS - - 8 A Integral Reverse P-N Junction Diode in the ISM - - 32 A MOSFET Reverse Recovery Time Trr Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse wi.


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