Document
Elektronische Bauelemente
SSE08N60SL
8A , 600V , RDS(ON) 1.2Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSE08N60SL is an N-channel enhancement mode power MOS field effect transistor which is produced. The improved planar strip cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
8A, 600V, RDS(ON)(TYP.)=0.96Ω@VGS=10V Low Gate Charge Low Crss Fast Switching Improved dv/dt Capability
1
Gate
2
Drain
3
Source
TO-220P
REF.
A B C D E F G
Millimeter Min. Max. 9.3 10.6 14.2 16.5
2.7 BSC. 12.6 14.7 1.0 1.8 0.4 1.0 3.6 4.8
REF.
H I J K L M
Millimeter Min. Max.
2.54 BCS. 1.8 2.9 2.6 3.95 0.3 0.7 5.8 7.0 1.0 1.45
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current
TC=25°C TC=100°C
ID
8 5
Pulsed Drain Current
IDM 32
Total Power Dissipation Single Pulse Avalanche Energy 1
TC=25°C Derate above 25°C
PD EAS
147 1.18 450
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient RθJA 62.5
Maximum Thermal Resistance Junction-Case
Notes: 1. L=30mH,IAS=5A, VDD=110V, RG=25Ω, Starting TJ =25°C
RθJC
0.85
Unit V V A A A W
°C / W mJ °C
°C / W °C / W
http://www.SeCoSGmbH.com/
09-Jul-2014 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 5
Elektronische Bauelemente
SSE08N60SL
8A , 600V , RDS(ON) 1.2Ω N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage
BVDSS
600 -
-
V VGS=0, ID= 250µA
VGS(th)
2 - 4 V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±30V, VDS=0V
Drain-Source Leakage Current
IDSS - - 1 µA VDS=600V, VGS=0V
Static Drain-Source On-Resistance Total Gate Charge 1.2 Gate-Source Charge 1.2 Gate-Drain Change 1.2 Turn-on Delay Time 1.2 Rise Time 1.2 Turn-off Delay Time 1.2 Fall Time 1.2 Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Qg Qgs Qgd
Td(on) Tr
Td(off) Tf Ciss Coss Crss
- 0.96 1.2 Ω VGS=10V, ID=4A
- 14.83 - 5.9 -4-
ID=8A nC VDS=480V
VGS=10V
- 29 -
- 71.33 - 34.93 -
VDD=300V nS ID=8A
RG=25 Ω
- 32.8 -
- 910 - 105 - 2.43 -
VGS =0 pF VDS=25V
f =1.0MHz
Source-Drain Diode
Diode Forward Voltage Continuous Source Current Pulsed Source Current
VSD - - 1.4 V IS=8A, VGS=0
IS - - 8 A Integral Reverse P-N Junction Diode in the
ISM - - 32 A MOSFET
Reverse Recovery Time
Trr
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse wi.