N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
SSF2102
2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Pr...
Description
Elektronische Bauelemente
SSF2102
2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSF2102 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
TS2
SOT-323
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40
REF.
G H J K L
Millimeter Min. Max.
0.1 REF. 0.525 REF. 0.08 0.25
0.8 TYP. 0.65 TYP.
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
Leader Size 7 inch
Top View
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
ID 2.1
Continuous Source-Drain Current(Diode Conduction)
IS
0.6
Maximum Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s)
PD RθJA
200 625
Operating Junction & Storage Temperature
TJ, TSTG
150, -55~150
Unit V V A A
mW °C / W
°C
http://www.SeCoSGmbH.com/
14-Jan-2014 Rev.A
Any changes of specification will not be informed individually.
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