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SSF2102

SeCoS

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente SSF2102 2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Pr...


SeCoS

SSF2102

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Description
Elektronische Bauelemente SSF2102 2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSF2102 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING TS2 SOT-323 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40 REF. G H J K L Millimeter Min. Max. 0.1 REF. 0.525 REF. 0.08 0.25 0.8 TYP. 0.65 TYP. PACKAGE INFORMATION Package MPQ SOT-323 3K Leader Size 7 inch Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID 2.1 Continuous Source-Drain Current(Diode Conduction) IS 0.6 Maximum Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) PD RθJA 200 625 Operating Junction & Storage Temperature TJ, TSTG 150, -55~150 Unit V V A A mW °C / W °C http://www.SeCoSGmbH.com/ 14-Jan-2014 Rev.A Any changes of specification will not be informed individually. Page 1 of 2 Elektronische Bauelemente SSF2102...




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