SSG4224

Elektronische Bauelemente SSG4224 10A,30V,RDS(ON) 14m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSG4224 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Features * Dual N MOSFET Package * Simple Drive Requirement * Low On-Resistance D1 D1 D2 D2 8 765 Date Code 4224SS 123 4 S1 G1 S2 G2 SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 45o 0.375 REF 3.80 4.00 0.35 1.27Typ. 0.49 4.80 0.100.25 5.00 0o 1.35 1.75 8o Dimensions in millimeters D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg Ratings 30 ±20 10 8 30 2 0.016 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max. Symbol Rthj-a Ratings 62.5 Unit oC /W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SSG4224 10A,30V,RDS(ON) 14m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 _ _ V Breakdown Voltage Temp. Coefficient BVDS/ Tj ...