Dual-N Enhancement Mode Power MOSFET
Elektronische Bauelemente
SSG4228
8.9A, 30V, RDS(ON) 18 mΩ Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product...
Description
Elektronische Bauelemente
SSG4228
8.9A, 30V, RDS(ON) 18 mΩ Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSG4228 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most synchronous buck converter applications. The SSG4228 meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology Super low gate charge Green Device Available
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size 13 inch
SOP-8
B
LD M
A HG
C
JK F
N E
REF.
A B C D E F G
Millimeter Min. Max. 5.80 6.20 4.70 5.10 3.80 4.00
0° 8° 0.40 1.27 0.10 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter Min. Max. 0.33 0.51 0.375 REF.
45°REF. 1.35 1.75 0.10 0.25
0.25 REF.
SD GD SD GD
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current@ VGS=10V 1 Pulsed Drain Current 2
TA=25°C TA=70°C
ID IDM
Power Dissipation@ TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG Thermal Date
Maximum Thermal Resistance from Junction to Ambient 1
Maximum Thermal Resistance from Junction to Ambient Maximum Thermal Resistance from Junction to Case 1
RθJA RθJC
Rating 30 ±20 8.9 7.1 37 2.1
-55~150
t≦10s, 60 Steady state,110
135 25
Unit V V A A W °C
°C / W
http://www.SeCoSGmbH.com/
18-May-2017 Rev. D
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