SSG4N10E

Elektronische Bauelemente SSG4N10E 4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4N10E provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. FEATURES Low on-resistance Simple Drive Requirement Double-N MosFET Package SOP-8 LD M AC N JK HG B FE MARKING CODE 4N10ESS = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch Dimensions in millimeters REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS Ratings 100 Gate-Source Voltage VGS ±20 Continuous Drain Current@ VGS =10V 1 Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TA = 25°C TA = 70°C ID IDM EAS 4 3.1 15 9 Avalanche Current Power Dissipation@ TA=25°C 4 IAS 6 PD 1.5 Operating Junction & Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Ratings Thermal Resistance Junction-ambient (Max.) 1 Thermal Resistance Junction-Case (Max.) 1 RθJA RθJC 85 50 Unit V V A A mJ A W °C °C / W °C / W http://www.SeCoSGmbH.com/ 21-May-2014 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektron...