MBD4448HCDW

Small Signal Product MBD4448HAQW/HADW/HCDW/HSDW/HTW Taiwan Semiconductor Switching Diode FEATURES - Fast switching speed - Surface device type mounting - Moisture sensitivity level 1 - High conductance power dissipation - For general purpose switching applications - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: SOT-363 small outline plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s SOT-363 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 200 Repetitive Peak Reverse Voltage Reverse Voltage VRRM VR 80 57 Average Rectified Forward Current IF(AV) 500 Average Rectified Output Current IO 250 Non-Repetitive Peak Forward Surge Current @ t = 1 μs @t=1s IFSM 4 1.5 Thermal Resistance (Junction to Ambient) RθJA 625 Junction and Storage Temperature Range TJ , TSTG -55 to 150 PARAMETER Reverse Breakdown Voltage IR=100μA IF=5.0mA Forward Voltage IF=10mA IF=100mA IF=150mA VR=70V Reverse Leakage Current VR=75V, VR=25V, VR=20V TJ=150oC TJ=150oC Junction Capacitance VR=6V, f=1MHz Reverse Recovery Time IF=5mA, VR=6V Note 1: Device mounted on FR-4 PCB, 1 inch × 0.85 inch × 0.062 inch Note 2: Short duration test pulse uesd tu minimize self-heating effect SYMBOL V(BR) VF VF CJ trr MIN 80 0.620...