MBR10H100CT – MBR10H200CT
Taiwan Semiconductor
10A, 100V - 200V Schottky Barrier Rectifier
FEATURES
● AEC-Q101 qualifi...
MBR10H100CT – MBR10H200CT
Taiwan Semiconductor
10A, 100V - 200V
Schottky Barrier Rectifier
FEATURES
● AEC-Q101 qualified available ● Low power loss, high efficiency ● Guard ring for overvoltage protection ● High surge current capability ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters
KEY PARAMETERS
PARAMETER VALUE UNIT
IF
10
A
VRRM
100 - 200 V
IFSM
120
A
TJ MAX
175
°C
Package
TO-220AB
Configuration
Dual dies
MECHANICAL DATA
● Case: TO-220AB ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Mounting torque: 0.56 N⋅m maximum ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 1.88g (approximately)
TO-220AB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
MBR SYMBOL 10H100CT
Marking code on the device
MBR 10H100CT
Repetitive peak reverse voltage
VRRM
100
MBR 10H150CT
MBR 10H150CT
150
Reverse voltage, total rms value
VR(RMS)
70
105
Forward current
Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse surge current(1)
Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage
IF IFSM IRRM IFRM dv/dt
10 120 1.0 10 10,000
Junction temperature
Storage temperature Notes: 1. tp = 2.0μs, 1.0KHz
TJ TSTG
-55 to +175 -55 to +175
MBR 10H200CT
MBR 10H200CT
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