2N3810A

2N3810 2N3810A SILICON DUAL PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 60 60 5.0 50 500 600 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO IEBO BVCBO BVCEO VCB=50V VEB=4.0V IC=10μA IC=10mA 60 60 BVEBO VCE(SAT) VCE(SAT) VBE(SAT) IE=10μA IC=100μA, IB=10μA IC=1.0mA, IB=100μA IC=100μA, IB=10μA 5.0 VBE(SAT) VBE(ON) hFE hFE IC=1.0mA, IB=100μA VCE=5.0V, IC=100μA VCE=5.0V, IC=10μA VCE=5.0V, IC=100μA 100 150 hFE VCE=5.0V, IC=500μA 150 hFE VCE=5.0V, IC=1.0mA 150 hFE VCE=5.0V, IC=10mA 125 fT VCE=5.0V, IC=500μA, f=30MHz 30 fT VCE=5.0V, IC=1.0mA, f=100MHz 100 Cob VCB=5.0V, IE=0, f=100kHz Cib VBE=0.5V, IC=0, f=100kHz hie VCE=10V, IC=1.0mA, f=1.0kHz 3.0 hre VCE=10V, IC=1.0mA, f=1.0kHz hfe VCE=10V, IC=1.0mA, f=1.0kHz 150 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 NF VCE=10V, IC=100μA, RG=3.0kΩ, f=100Hz, BW=20Hz MAX 10 20 0.20 0.25 0....