2N3811 2N3811A
SILICON DUAL PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR...
2N3811 2N3811A
SILICON DUAL
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3811 and 2N3811A are dual silicon
PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) Operating and Storage Junction Temperature
SYMBOL
VCBO VCEO VEBO
IC PD PD
TJ, Tstg
60 60 5.0 50 500 600 -65 to +200
UNITS V V V mA
mW mW °C
ELECTRICAL CHARACTERISTICS PER
TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
UNITS
ICBO
VCB=50V
10 nA
IEBO
VEB=4.0V
20 nA
BVCBO
IC=10μA
60
V
BVCEO
IC=10mA
60
V
BVEBO
IE=10μA
5.0
V
VCE(SAT) IC=100μA, IB=10μA
0.20 V
VCE(SAT) IC=1.0mA, IB=100μA
0.25 V
VBE(SAT) IC=100μA, IB=10μA
0.70 V
VBE(SAT) IC=1.0mA, IB=100μA
0.80 V
VBE(ON)
VCE=5.0V, IC=100μA
0.70 V
hFE VCE=5.0V, IC=1.0μA
75
hFE VCE=5.0V, IC=10μA
225
hFE VCE=5.0V, IC=100μA
300 900
hFE VCE=5.0V, IC=500μA
300 900
hFE VCE=5.0V, IC=1.0mA
300 900
hFE VCE=5.0V, IC=10mA
250
fT
VCE=5.0V, IC=500μA, f=30MHz
30
MHz
fT
VCE=5.0V, IC=1.0mA, f=100MHz
100
500 MHz
Cob VCB=5.0V, IE=0, f=100kHz
4.0 pF
Cib VBE=0.5V, IC=0, f=100kHz
8.0 pF
hie
VCE=10V, IC=1.0mA, f...