2N3905 2N3906
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905...
2N3905 2N3906
PNP SILICON
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are
PNP silicon
transistors designed for general purpose amplifier and switching applications.
NPN complementary types are 2N3903 and 2N3904.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg
ΘJA
40 40 5.0 200 625 -65 to +150
200
UNITS V V V mA
mW °C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
ICEV
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=1.0mA
BVEBO
IE=10μA
VCE(SAT)
IC=10mA, IB=1.0mA
VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
hFE VCE=1.0V, IC=0.1mA
hFE VCE=1.0V, IC=1.0mA
hFE VCE=1.0V, IC=10mA
hFE VCE=1.0V, IC=50mA
hFE VCE=1.0V, IC=100mA
hfe VCE=10V, IC=1.0mA, f=1.0kHz
fT VCE=20V, IC=10mA, f=100MHz
Cob VCB=5.0V, IE=0, f=100kHz
Cib VEB=0.5V, IC=0, f=100kHz
NF VCE=5.0V, IC=100μA, RS=1.0kΩ
f=10Hz to 15.7kHz
ton VCC=3.0V, VBE(OFF)=0.5V, IC=10mA IB1=1.0mA
toff VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
2N3905 MIN MAX
- 50 40 40 5.0 - 0.25 - 0.4 0.65 0.85 - 0.95 30 40 50 150 30 15 50 200 200 - 4.5 - 10
- 5.0
- 70 - 260
2N3906 MIN MAX
- 50 40 40 5.0 - 0.25 - 0.4 0.65 0.85 - 0.95 60 80 100 300 60 30 100 400 250 - 4.5 - 10
UNITS nA V V...