2N3947
SILICON NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3947 is a s...
2N3947
SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3947 is a silicon
NPN transistor designed for general purpose applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
Thermal Resistance
ΘJA
60 40 6.0 200 360 1.2 -65 to +200 146 486
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEX
VCE=40V, VEB=3.0V
ICEX
VCE=40V, VEB=3.0V, TA=150°C
BVCBO
IC=10μA
60
BVCEO
IC=10mA
40
BVEBO
IE=10μA
6.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
0.6
VBE(SAT) IC=50mA, IB=5.0mA
hFE VCE=1.0V, IC=0.1mA
60
hFE VCE=1.0V, IC=1.0mA
90
hFE VCE=1.0V, IC=10mA
100
hFE VCE=1.0V, IC=50mA
40
fT
VCE=20V, IC=10mA, f=100MHz
300
Cob VCB=10V, IE=0, f=1.0MHz
Cib VEB=1.0V, IC=0, f=1.0MHz
MAX 10 15
0.2 0.3 0.9 1.0
300
4.0 8.0
UNITS V V V mA
mW W °C °C/W °C/W
UNITS nA μA V V V V V V V
MHz pF pF
R0 (24-March 2014)
2N3947
SILICON
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
hie VCE=10V, IC=1.0mA, f=1.0kHz
20 12
hre VCE=10V, IC=1.0mA, f=1.0kHz
20
hfe VCE=10V...