DatasheetsPDF.com

2N3947

Central Semiconductor

SILICON NPN TRANSISTORS

2N3947 SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3947 is a s...


Central Semiconductor

2N3947

File Download Download 2N3947 Datasheet


Description
2N3947 SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3947 is a silicon NPN transistor designed for general purpose applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA 60 40 6.0 200 360 1.2 -65 to +200 146 486 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEX VCE=40V, VEB=3.0V ICEX VCE=40V, VEB=3.0V, TA=150°C BVCBO IC=10μA 60 BVCEO IC=10mA 40 BVEBO IE=10μA 6.0 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA 0.6 VBE(SAT) IC=50mA, IB=5.0mA hFE VCE=1.0V, IC=0.1mA 60 hFE VCE=1.0V, IC=1.0mA 90 hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V, IC=50mA 40 fT VCE=20V, IC=10mA, f=100MHz 300 Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=1.0V, IC=0, f=1.0MHz MAX 10 15 0.2 0.3 0.9 1.0 300 4.0 8.0 UNITS V V V mA mW W °C °C/W °C/W UNITS nA μA V V V V V V V MHz pF pF R0 (24-March 2014) 2N3947 SILICON NPN TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hie VCE=10V, IC=1.0mA, f=1.0kHz 20 12 hre VCE=10V, IC=1.0mA, f=1.0kHz 20 hfe VCE=10V...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)