2N3964

2N3963 2N3964 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3963 and 2N3964 are silicon PNP transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (TC=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJC ΘJA 2N3963 80 2N3964 45 80 45 6.0 200 1.2 360 -65 to +200 146 486 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3963 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=70V - 10 ICBO VCB=40V -- ICES VCE=70V - 10 ICES VCE=40V -- IEBO VEB=4.0V - 10 BVCBO IC=10μA 80 - BVCES IC=10μA 80 - BVCEO IC=5.0mA 80 - BVEBO IE=10μA 6.0 - VCE(SAT) IC=10mA, IB=0.5mA - 0.25 VCE(SAT) IC=50mA, IB=5.0mA - 0.40 VBE(SAT) IC=10mA, IB=0.5mA - 0.90 VBE(SAT) IC=50mA, IB=5.0mA - 0.95 hFE VCE=5.0V, IC=1.0μA 60 - hFE VCE=5.0V, IC=10μA 100 300 hFE VCE=5.0V, IC=10μA, TA=-55°C 40 - hFE VCE=5.0V, IC=100μA 100 - hFE VCE=5.0V, IC=1.0mA 100 450 hFE VCE=5.0V, IC=1.0mA, TA=100°C - 600 hFE VCE=5.0V, IC=10mA 100 - hFE VCE=5.0V, IC=50mA 90 - hFE VCE=5.0V, IC=50mA, TA=-55°C 45 - 2N3964 MIN MAX -- 10 -- 10 - 10 45 45 45 6.0 - 0.25 - 0.40 - 0.90 - 0.95 180 250 500 100 250 250 600 - 800 200 180 90 - UNITS V V V mA W...