2N5769

2N5769 PN2369A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM PD TJ, Tstg 40 40 15 4.5 200 500 350 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=20V ICBO VCB=20V, TA=125°C ICES VCE=20V (2N5769) IEBO VEB=4.5V (2N5769) BVCBO IC=10µA 40 BVCES IC=10µA 40 BVCEO IC=10mA 15 BVEBO IE=10µA 4.5 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=30mA, IB=3.0mA VCE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=10mA, IB=1.0mA 700 VBE(SAT) IC=30mA, IB=3.0mA VBE(SAT) IC=100mA, IB=10mA hFE VCE=0.35V, IC=10mA (2N5769) 40 hFE VCE=1.0V, IC=10mA (PN2369A) 40 hFE VCE=0.4V, IC=30mA 30 hFE VCE=1.0V, IC=100mA 20 MAX 400 30 400 1.0 200 250 500 850 1.15 1.6 120 120 UNITS V V V V mA mA mW °C UNITS nA µA nA µA V V V V mV mV mV mV V V R1 (10-March 2011) 2N5769 PN2369A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX fT VCE=10V, IC=10mA, f=100MHz 500 Cob VCB=...