BCW65

BCW65 SERIES BCW66 SERIES SURFACE MOUNT SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD TJ, Tstg ΘJA BCW65 BCW66 60 75 32 45 5.0 800 1.0 100 200 350 -65 to +150 357 UNITS V V V mA A mA mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=Rated VCEO ICBO VCB= Rated VCEO, TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=500mA, IB=50mA fT VCE=5.0V, IC=50mA, f=20MHz 170 Cc VCB=10V, IE=0, f=1.0MHz 8.0 Ce VEB=0.5V, IC=0, f=1.0MHz 50 MAX 20 20 20 0.3 0.7 1.25 2.0 UNITS nA μA nA V V V V V V V V V MHz pF pF hFE VCE=10V, IC=100μA hFE VCE=1.0V, IC=10mA ...