BCW65 SERIES BCW66 SERIES
SURFACE MOUNT SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The C...
BCW65 SERIES BCW66 SERIES
SURFACE MOUNT SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are
NPN silicon
transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM IB IBM PD TJ, Tstg ΘJA
BCW65
BCW66
60
75
32
45
5.0
800
1.0
100
200
350
-65 to +150
357
UNITS V V V mA A mA mA
mW °C °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=Rated VCEO
ICBO
VCB= Rated VCEO, TA=150°C
IEBO
VEB=4.0V
BVCBO
IC=10μA (BCW65)
60
BVCBO
IC=10μA (BCW66)
75
BVCEO
IC=10mA (BCW65)
32
BVCEO
IC=10mA (BCW66)
45
BVEBO
IE=10μA
5.0
VCE(SAT) IC=100mA, IB=10mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=100mA, IB=10mA
VBE(SAT) IC=500mA, IB=50mA
fT
VCE=5.0V, IC=50mA, f=20MHz
170
Cc
VCB=10V, IE=0, f=1.0MHz
8.0
Ce
VEB=0.5V, IC=0, f=1.0MHz
50
MAX 20 20 20
0.3 0.7 1.25 2.0
UNITS nA μA nA V V V V V V V V V MHz pF pF
hFE
VCE=10V, IC=100μA
hFE
VCE=1.0V, IC=10mA
...