Document
BCX70 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR
SOT-23 CASE
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DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX70 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.
MARKING CODES: BCX70G: AG BCX70H: AH BCX70J: AJ BCX70K: AK
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM IBM PD TJ, Tstg ΘJA
45 45 5.0 100 200 200 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(ON) fT Cc Ce NF
VCB=45V VCB=45V, TA=150°C VEB=4.0V IC=10μA IC=10mA IE=1.0μA IC=10mA, IB=250μA IC=50mA, IB=1.25mA IC=10mA, IB=250μA IC=50mA, IB=1.25mA VCE=5.0V, IC=2.0mA VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=200μA, RS=2.0kΩ, f=1.0kHz, BW=200Hz
45 45 5.0 0.05 0.10 0.60 0.70 0.55 100
250 1.7 11
MAX 20 20 20
0.35 0.55 0.85 1.05 0.75
6.0
BCX70G
BCX70H
BCX70J
MIN MAX MIN MAX MIN MAX
hFE VCE=5.0V, IC=10μA
40 30
hFE
VCE=5.0V, IC=2.0mA
120 220 180 310 250 460
hFE
VCE=1.0V, IC=50mA
50
70
90
UNITS V V V mA mA mA
mW °C °C/W
UNITS nA μA nA V V V V V V V V MHz pF pF
dB
BCX70K MIN MAX 100 380 630 100
R2 (20-November 2009)
BCX70 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
DEVICE BCX70G BCX70H BCX70J BCX70K
MARKING CODE AG AH AJ AK
w w w. c e n t r a l s e m i . c o m
R2 (20-November 2009)
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