BCY78-VIII

BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCY78 and BCY79 series types are silicon PNP epitaxial planar transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD TJ, Tstg JA JC BCY78 32 BCY79 45 32 45 5.0 100 200 200 340 1.0 -65 to +200 450 150 UNITS V V V mA mA mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICBO VCB=Rated VCBO, TA=150°C IEBO VEB=5.0V BVCBO IC=10μA (BCY78) 32 BVCBO IC=10μA (BCY79) 45 BVCEO IC=2.0mA (BCY78) 32 BVCEO IC=2.0mA (BCY79) 45 BVEBO IE=1.0μA 5.0 VCE(SAT) IC=10mA, IB=250μA VCE(SAT) IC=100mA, IB=2.5mA VBE(SAT) IC=10mA, IB=250μA 0.60 VBE(SAT) IC=100mA, IB=2.5mA 0.70 VBE(ON) VCE=5.0V, IC=2.0mA 0.60 MAX 15 10 20 0.25 0.80 0.85 1.20 0.75 BCY78-VII BCY78-VIII BCY78-IX BCY79-VII BCY79-VIII BCY79-IX MIN TYP MAX MIN MAX MIN MAX hFE VCE=5.0V, IC=10μA - 140 - 30 - 40 - hFE ...