Document
NTE2949 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
D
Features: D Ultra Low Gate Charge D Periodic Avalanche Rated D Extreme dv/dt Rated D High Peak Current Capability D Improved Transconductance
G S
Absolute Maximum Ratings:
Continuous
TTCC
= =
Drain Current, +25C . . . . . . . +100C . . . . . .
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20.7A 13.1A
Pulsed Drain Current (tp limited by TJmax), IDpuls . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.1A
Single Pulse Avalanche Energy (ID = 10A, VDD = 50V), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . 690mJ
Repetitive Avalanche Energy (tAR limited by TJmax, ID = 10A, VDD = 50V, Not 2), EAR . . . . . . . 1mJ
Repetitive Avalanche Current (tAR limited by TJmax), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Gate−Source Voltage, Static . . . . . . . .
.V.G. S.
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20V
AC (f > 1Hz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Total Power Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34.5W Reverse Diode dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V/ns
Drain−Source Voltage Slope (VDS = 480V, ID = 20.7A, TJ = +125C), dv/dt . . . . . . . . . . . . . . 50V/ns Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Lead Temperature (wavesoldering, .063” 1[.6mm] from case, 10sec), Tsold . . . . . . . . . . . . . . +260C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6K/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80K/W
Note 1. Limited only by maximum temperature. Note 2. Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR + f. Note 3. IhSigDh−sIDid,edis/dwtitch4.00A/s, VDClink = 400V, Vpeak < V(BR)DSS, TJ < TJmax, identical low−side and
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain−Source Breakdown Voltage
V(BR)DSS VGS = 0V, ID = 0.25mA
600 − − V
Gate−Source Avalanche Breakdo.
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