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NTE2949 Dataheets PDF



Part Number NTE2949
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2949 DatasheetNTE2949 Datasheet (PDF)

NTE2949 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Ultra Low Gate Charge D Periodic Avalanche Rated D Extreme dv/dt Rated D High Peak Current Capability D Improved Transconductance G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current, +25C . . . . . . . +100C . . . . . . I.D. .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

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NTE2949 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Ultra Low Gate Charge D Periodic Avalanche Rated D Extreme dv/dt Rated D High Peak Current Capability D Improved Transconductance G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current, +25C . . . . . . . +100C . . . . . . I.D. .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.7A 13.1A Pulsed Drain Current (tp limited by TJmax), IDpuls . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.1A Single Pulse Avalanche Energy (ID = 10A, VDD = 50V), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . 690mJ Repetitive Avalanche Energy (tAR limited by TJmax, ID = 10A, VDD = 50V, Not 2), EAR . . . . . . . 1mJ Repetitive Avalanche Current (tAR limited by TJmax), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Gate−Source Voltage, Static . . . . . . . . .V.G. S. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V AC (f > 1Hz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Total Power Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34.5W Reverse Diode dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V/ns Drain−Source Voltage Slope (VDS = 480V, ID = 20.7A, TJ = +125C), dv/dt . . . . . . . . . . . . . . 50V/ns Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Lead Temperature (wavesoldering, .063” 1[.6mm] from case, 10sec), Tsold . . . . . . . . . . . . . . +260C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6K/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80K/W Note 1. Limited only by maximum temperature. Note 2. Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR + f. Note 3. IhSigDh−sIDid,edis/dwtitch4.00A/s, VDClink = 400V, Vpeak < V(BR)DSS, TJ < TJmax, identical low−side and Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain−Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 0.25mA 600 − − V Gate−Source Avalanche Breakdo.



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