BC817-16

BC817 SERIES BC818 SERIES SURFACE MOUNT SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD TJ, Tstg ΘJA BC817 50 BC818 30 45 25 5.0 500 1.0 200 350 -65 to +150 357 UNITS V V V mA A mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=20V ICBO VCB=20V, TJ=150°C IEBO VEB=5.0V BVCES IC=10μA (BC817) 50 BVCES IC=10μA (BC818) 30 BVCEO IC=10mA (BC817) 45 BVCEO IC=10mA (BC818) 25 BVEBO IE=1.0μA 5.0 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=1.0V, IC=500mA fT VCE=5.0V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz 10 MAX 100 5.0 100 0.7 1.2 UNITS nA μA nA V V V V V V V MHz pF BC817 BC817-16 BC817-25 BC817-40 BC818 BC818-16 BC818-25 BC818-40 MIN MAX MIN MAX MIN MAX MIN MAX hFE VCE=1.0V, IC=100mA 100 600 100 250 160 400 250 600 hFE VCE=1.0V, IC=500mA 40 - 40 - 40 - 40 - R1 (11-November 2013) BC817 SERIES...