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CMBT3906E

Central Semiconductor

SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-923 CASE FEATURES...


Central Semiconductor

CMBT3906E

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Description
CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-923 CASE FEATURES Very Small Package Size 200mA Collector Current Low VCE(SAT) (0.1V Typ @ 50mA) Miniature 0.8 x 0.6 x 0.4mm Ultra Low height profile FEMTOmini™ Surface Mount Package w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBT3904E (NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged in the FEMTOmini™ SOT-923 package, these transistors provide performance characteristics suitable for the most demanding size constrained applications. MARKING CODES: CMBT3904E: B CMBT3906E: G APPLICATIONS DC / DC Converters Voltage Clamping Protection Circuits Battery powered applications including: Cell Phones, Digital Cameras, Pagers, PDAs, Laptop Computers, etc. MAXIMUM RATINGS: (TA=25°C) ♦Collector-Base Voltage Collector-Emitter Voltage ♦Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 40 6.0 200 100 -65 to +150 1250 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN SYMBOL TEST CONDITIONS MIN TYP ICEV ♦ BVCBO VCE=30V, VEB=3.0V IC=10µA 60 115 BVCEO ♦ BVEBO ♦ VCE(SAT) ♦ VCE(SAT) IC=1.0mA IE=10µA IC=10mA, IB=1...




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