CMKT2907AG

CMKT2907A CMKT2907AG SURFACE MOUNT DUAL PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2907A and CMKT2907AG each consist of two individual isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini™ device has been designed for small signal general purpose and switching applications. SOT-363 CASE The CMKT2907AG is Halogen Free by design. MARKING CODES: CMKT2907A: K07 CMKT2907AG: K7G MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 60 5.0 600 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V 10 ICBO VCB=50V, TA=125°C 10 ICEV VCE=30V, VBE=0.5V 50 BVCBO IC=10µA 60 BVCEO IC=10mA 60 BVEBO IE=10µA 5.0 VCE(SAT) IC=150mA, IB=15mA 0.4 VCE(SAT) IC=500mA, IB=50mA 1.6 VBE(SAT) IC=150mA, IB=15mA 1.3 VBE(SAT) IC=500mA, IB=50mA 2.6 hFE VCE=10V, IC=0.1mA 75 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 50 UNITS V V V mA mW °C °C/W UNITS nA µA nA V V V V V V V R4 (13-January 2010) CMKT2907A CMKT2907AG SURFACE MOUNT DUAL PNP SILICON TRANSISTORS ...