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CUR806-G Dataheets PDF



Part Number CUR806-G
Manufacturers Comchip Technology
Logo Comchip Technology
Description High Efficiency Glass Passivated Rectifiers
Datasheet CUR806-G DatasheetCUR806-G Datasheet (PDF)

High Efficiency Glass Passivated Rectifiers CUR801-G Thru. CUR808-G Reverse Voltage: 50 to 1000 V Forward Current: 8.0 A RoHS Device Comchip SMD Diode Specialist Features -Low switching noise. -Low forward voltage drop. -Low thermal resistance. -High current capability. -High fast switching capability. -High surge capacity. Mechanical Data -Case: TO-220AC, molded plastic. -Epoxy: UL 94V-0 rate flame retardant. -Lead: MIL-STD-202E method 208C guaranteed. -Mounting position: Any -Weight: 2.24 gr.

  CUR806-G   CUR806-G



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High Efficiency Glass Passivated Rectifiers CUR801-G Thru. CUR808-G Reverse Voltage: 50 to 1000 V Forward Current: 8.0 A RoHS Device Comchip SMD Diode Specialist Features -Low switching noise. -Low forward voltage drop. -Low thermal resistance. -High current capability. -High fast switching capability. -High surge capacity. Mechanical Data -Case: TO-220AC, molded plastic. -Epoxy: UL 94V-0 rate flame retardant. -Lead: MIL-STD-202E method 208C guaranteed. -Mounting position: Any -Weight: 2.24 grams TO-220AC 0.135(3.44) 0.413(10.50) 0.103(2.62) 0.374( 9.50) 0.153(3.90) 0.146(3.70) 0.04 MAX (1.0) 0.270(6.90) 0.230(5.80) 0.610(15.50) 0.583(14.80) 0.189(4.80) 0.173(4.40) 0.055(1.40) 0.047(1.20) 0.057(1.45) 0.045(1.14) 0.177 0.583(14.80) (4.5) 0.531(13.50) 0.043(1.10) 0.032(0.80) 0.102(2.60) 0.091(2.30) 0.024(0.60) 0.012(0.30) 0.138 (3.50) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Parameter Symbol CUR 801-G CUR 802-G CUR 803-G CUR 804-G CUR 805-G CUR 806-G CUR 807-G CUR 808-G Unit Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward Rectified current @TA=75°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Peak instantaneous voltage at 8.0A DC Maximum DC reverse current at rated DC blocking voltage @TJ=25°C @TJ=100°C Typical junction capacitance (Note 2) Typical thermal resistance Maximum Reverse Recovery Time (Note 1) Operating and storage temperature range VRRM VRMS VDC IO IFSM VF IR CJ RθJA Trr TJ, TSTG 50 35 50 100 200 300 400 600 800 1000 V 70 140 210 280 420 560 700 V 100 200 300 400 600 800 1000 V 8.0 A 150 A 1.0 1.3 1.7 V 10 μA 150 40 pF 2.5 °C/W 60 nS -55 ~ +150 °C NOTES: 1. Measured with IF=0.5A, IR=1A, IRR=0.25A. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. Company reserves the right to improve product design , functions and reliability without notice. QW-BU013 Comchip Technology CO., LTD. REV:A Page 1 ComchipHigh Efficiency Glass Passivated Rectifiers SMD Diode Specialist RATING AND CHARACTERISTIC CURVES ( CUR801-G Thru. CUR808-G ) Average Forward Current, ( A ) Fig.1 - Typical Forward Current Derating Curve 10 8 6 4 2 Single phase half wave 60Hz Resistive or inductive load 0 0 25 50 75 100 125 Ambient Temperature, (°C) 150 Instantaneous Forward Current, (A) Fig.2 - Typical Instantaneous Forward Characteristics 100 CUR801-G ~ CUR803-G CUR804-G ~ CUR805-G 10 CUR806-G ~ CUR808-G 1.0 TJ = 25°C Pulse width 300us 1% duty cycle 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous Forward Voltage, (V) Peak Forward Surge Current, (A) Fig.3 - Maximum Non-repetitive Forward Surge Current 150 125 100 75 50 25 8.3ms Single half sine wave (JEDEC method) 0 1.


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