DatasheetsPDF.com

DMN1032UCB4 Dataheets PDF



Part Number DMN1032UCB4
Manufacturers Diodes
Logo Diodes
Description N-CHANNEL MOSFET
Datasheet DMN1032UCB4 DatasheetDMN1032UCB4 Datasheet (PDF)

ADVANCED INFORMATION PART OBSOLETE - CONTACT US DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS 12V RDS(ON) 18mΩ Qg 3.2nC Qgd 0.3nC ID 4.8A Typ. @ VGS = 4.5V, TA = +25°C Description This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprin.

  DMN1032UCB4   DMN1032UCB4


Document
ADVANCED INFORMATION PART OBSOLETE - CONTACT US DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS 12V RDS(ON) 18mΩ Qg 3.2nC Qgd 0.3nC ID 4.8A Typ. @ VGS = 4.5V, TA = +25°C Description This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. Applications  DC-DC converters  Battery management  Load switches Features  LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.2nC for Ultra-Fast Switching  VGS(th) = 0.8V Typ. for a Low Turn-On Potential  CSP with Footprint 1.0mm × 1.0mm  Height = 0.62mm for Low Profile  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Qsuffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Package: U-WLB1010-4  Terminal Connections: See Diagram Below U-WLB1010-4 Top View Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN1032UCB4-7 Package U-WLB1010-4 Qty. 3,000 Packing Carrier Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. DMN1032UCB4 Document number: DS36643 Rev. 8 - 4 1 of 8 www.diodes.com September 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. ADVANCED INFORMATION DMN1032UCB4 Marking Information U-WLB1010-4 MW = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: J = 2022) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2013 … 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 A … J K L M N O P R S T Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 5) VGS = 4.5V Continuous Drain Current (Note 5) VGS = 2.5V Pulsed Drain Current (Note 6) Steady State Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IDM Value 12 ±8 4.8 3.8 4.5 3.6 15 Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) Thermal Resistance, Junction to Case @TC = +25°C (Note 7) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Notes: 5. Device mounted on FR4 material with 1inch2 (6.45cm2), 2oz. (0.071mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. Symbol PD RθJA RθJC PD RθJA TJ, TSTG Value 0.9 138.81 31.77 1.16 107.59 -55 to +150 Unit W °C/W °C/W W °C/W °C DMN1032UCB4 Document number: DS36643 Rev. 8 - 4 2 of 8 www.diodes.com September 2022 © 2022 Copyright Diodes Incorporated. All Rights Reserved. ADVANCED INFORMATION DMN1032UCB4 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Time DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Series Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Charge at Vth Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol Min BVDSS 12 IDSS — IGSS — VGS(th) 0.4 — RDS(ON) — — |Yfs| — VSD — Qrr — trr — Ciss — Coss — Crss — RG — Qg — Qgs — Qgd — Qg(th) — tD(on) — t.


DMN1025UFDB DMN1032UCB4 DMN1033UCB4


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)