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DMN1032UCB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
VDSS 12V
RDS(ON) 18mΩ
Qg 3.2nC
Qgd 0.3nC
ID 4.8A
Typ. @ VGS = 4.5V, TA = +25°C
Description
This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.
Applications
DC-DC converters Battery management Load switches
Features
LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.2nC for Ultra-Fast Switching
VGS(th) = 0.8V Typ. for a Low Turn-On Potential CSP with Footprint 1.0mm × 1.0mm Height = 0.62mm for Low Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Qsuffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Package: U-WLB1010-4 Terminal Connections: See Diagram Below
U-WLB1010-4
Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMN1032UCB4-7
Package U-WLB1010-4
Qty. 3,000
Packing Carrier
Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
DMN1032UCB4
Document number: DS36643 Rev. 8 - 4
1 of 8 www.diodes.com
September 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
ADVANCED INFORMATION
DMN1032UCB4
Marking Information
U-WLB1010-4
MW = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: J = 2022) M or M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2013
…
2022 2023 2024 2025 2026 2027 2028 2029 2030 2031
A
…
J
K
L
M
N
O
P
R
S
T
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 4.5V
Continuous Drain Current (Note 5) VGS = 2.5V Pulsed Drain Current (Note 6)
Steady State
Steady State
TA = +25°C TA = +70°C TA = +25°C TA = +70°C
Symbol VDSS VGSS ID
ID IDM
Value 12 ±8 4.8 3.8
4.5 3.6 15
Unit V V A
A A
Thermal Characteristics
Characteristic Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) Thermal Resistance, Junction to Case @TC = +25°C (Note 7) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range
Notes:
5. Device mounted on FR4 material with 1inch2 (6.45cm2), 2oz. (0.071mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
Symbol PD RθJA RθJC PD RθJA
TJ, TSTG
Value 0.9
138.81 31.77 1.16 107.59 -55 to +150
Unit W °C/W °C/W W °C/W °C
DMN1032UCB4
Document number: DS36643 Rev. 8 - 4
2 of 8 www.diodes.com
September 2022
© 2022 Copyright Diodes Incorporated. All Rights Reserved.
ADVANCED INFORMATION
DMN1032UCB4
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Time DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Series Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Charge at Vth Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Symbol Min
BVDSS
12
IDSS
—
IGSS
—
VGS(th)
0.4
—
RDS(ON)
—
—
|Yfs|
—
VSD
—
Qrr
—
trr
—
Ciss
—
Coss
—
Crss
—
RG
—
Qg
—
Qgs
—
Qgd
—
Qg(th)
—
tD(on)
—
t.