RFN3BM6S

Super Fast Recovery Diode RFN3BGE6S Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1.6 1.6 Features 1) Low switching loss 2) Low forward voltage Construction Silicon epitaxial planar type ROHM : TO-252GE JEITA : - TO-252 2.3 2.3 Structure Cathode Taping specifications (Unit : mm) Open Anode Absolute maximum ratings (at Tc= 25°C unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 600 V Reverse voltage Average rectified foward current Peak forward surge current Junction temperature VR Io IFSM Tj Reverse direct voltage 60Hz half sin waveform, resistive load, Tc=112°CMax 60Hz half sin waveform, non-repetitive, Tj=25°C - 600 V 3A 20 A 150 °C Storage temperature Tstg - 55 ～150 °C Electrical characteristics (at Tj= 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=3A - 1.35 1.55 V Reverse current IR VR=600V - - 10 A Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR - 18 30 ns Thermal resistance(1) (1) Value is guaranteed by design Rth(j-c) Junction to case - - 6 °C / W www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/4 2020/03/12_Rev.001 RFN3BGE6S Electrical characteristic curves Datasheet FORWARD CURRENT : IF(A) 100 100000 Tj = 150°C Tj = 125°C 10000 10 REVERSE CURRENT : IR(nA) 1 Tj = 150°C Tj ...