RFN6BM2DFH

Super Fast Recovery Diode RFN6BM2DFH Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1 Features 1) Cathode common dual type 2) Low switching loss 3) High current overload capacity ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 Structure Cathode Anode Anode Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage Average rectified foward current Forward current surge peak Operating junction temperature VR Io IFSM Tj Direct voltage 60Hz half sin wave , Resistive load, 1/2Io per diode Tc=106°C 60Hz half sin wave, Non-repetitive at Tj=25°C, per diode - 200 6 40 150 V A A °C Storage temperature Tstg - 55 to 150 °C Electrical Characteristics (Tj = 25°C, per diode) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=3A - 0.90 0.98 V Reverse current IR VR=200V - 0.05 10 A Reverse recovery time trr IF=0.5A, IR=1A, Irr=0.25×IR - 12 25 ns Thermal resistance Rth(j-c) Junction to case - - 6.0 °C / W www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/4 2018.12 - Rev.C RFN6BM2DFH Electrical Characteristic Curves Datasheet FORWARD CURRENT : IF(A) 100 10 1 Tj = 150°C Tj = 125°C 0.1 Tj = 75°C 0.01...