RFNL20TJ6S

Super Fast Recovery Diode RFNL20TJ6S Data Sheet lSerise Standard Fast Recovery lApplication General rectification For PFC (DCM : Discontinuous Current Mode) lFeatures 1) Ultra low forward voltage 2) Low switching loss 3) High current overload capacity lConstruction Silicon epitaxial planar type lDimensions (Unit : mm) f3.1±0.1 10.2±0.2 4.5±0.1 2.6±0.1 lStructure 3.95±0.1 28.56±0.2 9.05±0.1 6 15.05±0.1 16.0±0.1 3 RFNL20 TJ6S 1 2 1.4±0.2 Cathode Anode 2.6±0.1 13.51 9.56±0.2 2.54±0.1 0.83±0.1 5.08±0.1 0.6±0.1 ROHM : TO-220ACFP 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 600 V Reverse voltage VR Direct reverse voltage 600 V Average current Io 60Hz half sin wave , resistive load Tc=70°C 20 A Non-repetitive forward surge current IFSM 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C 200 A Operating junction temperature Tj - 150 °C Storage temperature Tstg - -55 to +150 °C lElectrical Characteristics (Tj = 25°C) Parameter Symbol Conditions Min. Forward voltage VF IF=20A Tj=25°C 0.9 Tj=125°C - Reverse current IR VR=600V Tj=25°C Tj=125°C - Reverse recovery time Forward recovery time Forward recovery voltage trr IF=0.5A, IR=1A, Irr=0.25×IR IF=20A, VR=400V, dIF/dt=-100A/ms - tfr IF=20A, dIF/dt=100A/ms, - VFp VFR=1.1xVFmax - Thermal resistance Rth(j-a) Rth(j-c) Junction to ambi...