11NB80

www.DataSheet4U.com ® STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE S TW 11NB 80 V DSS 800 V RDS(on) < 0.8 Ω ID 11 A s TYPICAL RDS(on) = 0.65 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sy mb o l Parameter V DS V DGR VGS ID ID IDM () Ptot Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature () Pulse width limited by safe operating area Value 800 800 ± 30 11 6.9 44 190 1.52 4 -65 to 150 150 I SD ≤ 11A...