VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.3 A
C-16
Cathode
Anode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max. TJ max. Diode variation
EAS
DO-201AD (C-16) 3.3 A
90 V, 100 V See Electrical table 3.0 mA at 125 °C
150 °C Single die
3.0 mJ
FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop • High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS Directive 2002/95/EC • Designed and qualified for commercial level • Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION The VS-31DQ... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform
tp = 5 μs sine 3 Apk, TJ = 25 °C
VALUES 3.3
90/100 210 0.85
- 40 to 150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-31DQ09 90
VS-31DQ09-M3 90
VS-31DQ10 100
VS-31DQ10-M3 UNITS 100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current See fig. 4
IF(AV)
Maximum peak one cycle non-repetitive surge current See fig. 6
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TL = 108 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 1 A, L = 6 mH
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES 3.3
210 34 3.0 0.5
UNITS
A
mJ A
Revision: 19-Sep-11
1 Document Number: 93321
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop See fig. 1
VFM (1)
Maximum reverse leakage current See fig. 4
IRM (1)
Typical junction capacitance Typical series inductance Maximum voltage rate of charge
CT LS dV/dt
Note (1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
3A TJ = 25 °C
6A
3A TJ = 125 °C
6A
TJ = 25 °C TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES 0.85 0.97 0.69 0.80 1 3 110 9.0
10 000
UNITS
V
mA pF nH V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ (1), TStg
Maximum thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
RthJA RthJL
DC operation Without cooling fin
DC operation
Approximate weight
Marking device
Case style C-16
Note (1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES - 40 to 150
UNITS °C
80 °C/W
15
1.2 g
0.042
oz.
31DQ09
31DQ10
Revision: 19-Sep-11
2 Document Number: 93321
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3
www.vishay.com
Vishay Semiconductors
IF - Instantaneous Forward Current (A)
10
1
TJ = 150 °C TJ = 125 °C
TJ = 25 °C
0.1 0
0.3 0.6 0.9 1.2
93321_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
IR - Reverse Current (mA)
10 TJ = 150 °C
1
TJ = 125 °C 0.1
0.01
0.001
0.0001
TJ = 25 °C
0 0 20 40 60 80 100
93321_02
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
160
Allowable Lead Temperature (°C)
140 DC
120
100
Square wave (D = 0.50) 80 % Rated VR applied 80
see note (1)
60 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
93321_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
4 D = 0.20 D = 0.25 D = 0.33
3 D = 0.50 D = 0.75
2 RMS Limit
DC
Average Power Loss (W)
1
0 012345
93321_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
IFSM - Non-Repetitive Surge Current (A)
CT - Junction Capacitance (pF)
T = 25 °C
J
100
100
At Any Rated Load Condition
And With rated VRRM Ap.