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VS-31DQ10-M3 Dataheets PDF



Part Number VS-31DQ10-M3
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-31DQ10-M3 DatasheetVS-31DQ10-M3 Datasheet (PDF)

VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A C-16 Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS DO-201AD (C-16) 3.3 A 90 V, 100 V See Electrical table 3.0 mA at 125 °C 150 °C Single die 3.0 mJ FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical str.

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VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A C-16 Cathode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS DO-201AD (C-16) 3.3 A 90 V, 100 V See Electrical table 3.0 mA at 125 °C 150 °C Single die 3.0 mJ FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for commercial level • Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-31DQ... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 3 Apk, TJ = 25 °C VALUES 3.3 90/100 210 0.85 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-31DQ09 90 VS-31DQ09-M3 90 VS-31DQ10 100 VS-31DQ10-M3 UNITS 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS 50 % duty cycle at TL = 108 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 1 A, L = 6 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical VALUES 3.3 210 34 3.0 0.5 UNITS A mJ A Revision: 19-Sep-11 1 Document Number: 93321 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop See fig. 1 VFM (1) Maximum reverse leakage current See fig. 4 IRM (1) Typical junction capacitance Typical series inductance Maximum voltage rate of charge CT LS dV/dt Note (1) Pulse width < 300 μs, duty cycle < 2 % TEST CONDITIONS 3A TJ = 25 °C 6A 3A TJ = 125 °C 6A TJ = 25 °C TJ = 125 °C VR = Rated VR VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.85 0.97 0.69 0.80 1 3 110 9.0 10 000 UNITS V mA pF nH V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to ambient Typical thermal resistance, junction to lead RthJA RthJL DC operation Without cooling fin DC operation Approximate weight Marking device Case style C-16 Note (1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink dTJ RthJA VALUES - 40 to 150 UNITS °C 80 °C/W 15 1.2 g 0.042 oz. 31DQ09 31DQ10 Revision: 19-Sep-11 2 Document Number: 93321 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3 www.vishay.com Vishay Semiconductors IF - Instantaneous Forward Current (A) 10 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 0 0.3 0.6 0.9 1.2 93321_01 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics IR - Reverse Current (mA) 10 TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 0.001 0.0001 TJ = 25 °C 0 0 20 40 60 80 100 93321_02 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 160 Allowable Lead Temperature (°C) 140 DC 120 100 Square wave (D = 0.50) 80 % Rated VR applied 80 see note (1) 60 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 93321_04 IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Allowable Lead Temperature vs. Average Forward Current 4 D = 0.20 D = 0.25 D = 0.33 3 D = 0.50 D = 0.75 2 RMS Limit DC Average Power Loss (W) 1 0 012345 93321_05 Average Forward Current - IF(AV) (A) Fig. 5 - Forward Power Loss Characteristics 1000 IFSM - Non-Repetitive Surge Current (A) CT - Junction Capacitance (pF) T = 25 °C J 100 100 At Any Rated Load Condition And With rated VRRM Ap.


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