www.vishay.com
VS-48CTQ060PbF, VS-48CTQ060-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Base 2 common cathode
TO-220AB
Anode
2 Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max. TJ max. Diode variation
EAS
TO-220AB 2 x 20 A 60 V 0.58 V
89 mA at 125 °C 150 °C
Common cathode 13 mJ
FEATURES • Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• 150 °C TJ operation • High frequency operation
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition (-N3 only)
DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM
Rectangular waveform tp = 5 μs sine
VF 20 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES 40 60
1000 0.58 - 55 to 150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VS-48CTQ060PbF VS-48CTQ060-N3 60 60
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current See fig. 5
per leg per device
IF(AV)
Maximum peak one cycle non-repetitive surge current per leg See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 111 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES 20 40
1000 260 13 1.50
UNITS
A
mJ A
Revision: 29-Aug-11
1 Document Number: 94229
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-48CTQ060PbF, VS-48CTQ060-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg See fig. 1
VFM (1)
Maximum reverse leakage current per leg See fig. 2
Threshold voltage Forward slope resistance Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change
Note (1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO) rt CT LS
dV/dt
20 A 40 A 20 A 40 A TJ = 25 °C TJ = 125 °C
TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR
VALUES 0.61 0.83 0.58 0.75 2 89 0.37 8.26 1220 8.0
10 000
UNITS
V
mA V m pF nH V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per package
RthJC
DC operation
Typical thermal resistance, case to heatsink
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque Marking device
minimum maximum
Case style TO-220AB
VALUES - 55 to 150
UNITS °C
2.0
1.0 °C/W
0.50
2g
0.07 oz.
6 (5) 12 (10)
kgf · cm (lbf · in)
48CTQ060
Revision: 29-Aug-11
2 Document Number: 94229
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-48CTQ060PbF, VS-48CTQ060-N3
Vishay Semiconductors
IF - Instantaneous Forward Current (A)
1000
100
TJ = 150 °C TJ = 125 °C 10 TJ = 25 °C
1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
10 000
IR - Reverse Current (mA)
1000
100 TJ = 150 °C TJ = 125 °C
10 TJ = 100 °C 1 TJ = 75 °C TJ = 50 °C
0.1
0.01 TJ = 25 °C
0.001 0
10 20 30 40 50 60
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
ZthJC - Thermal Impedance (°C/W)
1000
TJ = 25 °C
100 0
10 20 30 40 50 60
VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
0.1
0.01 0.00001
Single pulse (thermal resistance)
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
P DM
t
1
t
2
Notes: 1. Duty factor D = .