Document
Medium power transistor (60V, 0.5A)
2SC5868
Features 1) High speed switching.
(Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically
(Typ. : 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load
and capacitance load. 4) Complements the 2SA2090
Applications Small signal low frequency amplifier High speed switching
Dimensions (Unit : mm)
TSMT3
2.8 1.6
(3) 0.4
2.9
1.9 0.95 0.95
(1)
0.7 0.85 1.0MAX
0.16 (2)
(1) Base (2) Emitter (3) Collector
0 0.1
0.3 0.6 Each lead has same dimensions
Abbreviated symbol : VS
Structure NPN Silicon epitaxial planar transistor
Packaging specifications
Type 2SC5868
Package Code Basic ordering unit (pieces)
Taping TL 3000
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulsed
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Limits 60 60 6 0.5 1.0 500 150
−55 to 150
Unit
V
V
V
A A mW
∗1 ∗2
°C
°C
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1/3
2011.03 - Rev.A
2SC5868
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-emitter breakdown voltage BVCEO
Collector-base breakdown voltage BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage VCE (sat)
DC current gain
hFE
Transition frequency
fT
Corrector output capacitance
Cob
Turn-on time Storage time
Ton Tstg
Fall time
Tf
∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits
Min. 60 60 6 − − −
120
−
−
− − −
Typ. − − − − − 75
−
300
5
70 130 80
Max. − − − 1.0 1.0
300
390
−
−
− − −
Unit V V V μA μA mV
−
MHz
pF
ns ns ns
Condition
IC=1mA IC=100μA IE=100μA VCB=40V VEB=4V IC=100mA IB=10mA VCE=2V IC=50mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=500mA IB1=50mA IB2= −50mA VCC 25V
∗1 ∗1
∗2
hFE RANK
Q 120−270
R 180−390
Data Sheet
SWITCHING TIME : (ns)
Electrical characteristic curves
1000
Ta=25°C VCC=25V IC / IB=10 / 1
Tstg
100 Tf Ton
10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
DC CURRENT GAIN : hFE
1000
100 Ta=125°C Ta=25°C Ta= −40°C
10
VCE=2V
1 0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.2 DC Current Gain vs. Collector Current (Ι)
DC CURRENT GAIN : hFE
1000 100 10
Ta=25°C
VCE=5V VCE=3V VCE=2V
1 0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs. Collector Current (ΙΙ)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
10
1
Ta=125°C Ta=25°C Ta= −40°C 0.1
IC / IB=10 / 1
0.01 0.001
0.01
0.1
COLLECTOR CURRENT : IC (A)
1
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (Ι)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
10
1 IC / IB=20 / 1 IC / IB=10 / 1
0.1
Ta=25°C
0.01 0.001
0.01
0.1
COLLECTOR CURRENT : IC (A)
1
Fig.5 Collector-Emitter Sat.