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C5868 Dataheets PDF



Part Number C5868
Manufacturers Rohm
Logo Rohm
Description 2SC5868
Datasheet C5868 DatasheetC5868 Datasheet (PDF)

Medium power transistor (60V, 0.5A) 2SC5868 Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 Applications Small signal low frequency amplifier High speed switching Dimensions (Unit : mm) TSMT3 2.8 1.6 (3) 0.4 2.9 1.9 0.95 0.95 (1) 0.7 0.85 1.0MAX 0.16 (2) (1) Base (2) Emitter (3) Collector 0 0.1 0.

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Medium power transistor (60V, 0.5A) 2SC5868 Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 Applications Small signal low frequency amplifier High speed switching Dimensions (Unit : mm) TSMT3 2.8 1.6 (3) 0.4 2.9 1.9 0.95 0.95 (1) 0.7 0.85 1.0MAX 0.16 (2) (1) Base (2) Emitter (3) Collector 0 0.1 0.3 0.6 Each lead has same dimensions Abbreviated symbol : VS Structure NPN Silicon epitaxial planar transistor Packaging specifications Type 2SC5868 Package Code Basic ordering unit (pieces) Taping TL 3000 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 60 60 6 0.5 1.0 500 150 −55 to 150 Unit V V V A A mW ∗1 ∗2 °C °C www.rohm.com ○c 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.A 2SC5868 Electrical characteristics (Ta=25C) Parameter Symbol Collector-emitter breakdown voltage BVCEO Collector-base breakdown voltage BVCBO Emitter-base breakdown voltage BVEBO Collector cut-off current ICBO Emitter cut-off current IEBO Collector-emitter saturation voltage VCE (sat) DC current gain hFE Transition frequency fT Corrector output capacitance Cob Turn-on time Storage time Ton Tstg Fall time Tf ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits Min. 60 60 6 − − − 120 − − − − − Typ. − − − − − 75 − 300 5 70 130 80 Max. − − − 1.0 1.0 300 390 − − − − − Unit V V V μA μA mV − MHz pF ns ns ns Condition IC=1mA IC=100μA IE=100μA VCB=40V VEB=4V IC=100mA IB=10mA VCE=2V IC=50mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=500mA IB1=50mA IB2= −50mA VCC 25V ∗1 ∗1 ∗2 hFE RANK Q 120−270 R 180−390 Data Sheet SWITCHING TIME : (ns) Electrical characteristic curves 1000 Ta=25°C VCC=25V IC / IB=10 / 1 Tstg 100 Tf Ton 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 Switching Time DC CURRENT GAIN : hFE 1000 100 Ta=125°C Ta=25°C Ta= −40°C 10 VCE=2V 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.2 DC Current Gain vs. Collector Current (Ι) DC CURRENT GAIN : hFE 1000 100 10 Ta=25°C VCE=5V VCE=3V VCE=2V 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.3 DC Current Gain vs. Collector Current (ΙΙ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 10 1 Ta=125°C Ta=25°C Ta= −40°C 0.1 IC / IB=10 / 1 0.01 0.001 0.01 0.1 COLLECTOR CURRENT : IC (A) 1 Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 10 1 IC / IB=20 / 1 IC / IB=10 / 1 0.1 Ta=25°C 0.01 0.001 0.01 0.1 COLLECTOR CURRENT : IC (A) 1 Fig.5 Collector-Emitter Sat.


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