N-CHANNEL MOSFET
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N R N-CHANNEL MOSFET
JCS840
MAIN CHARACTERISTICS
Package
ID 8 A VDSS 500 V Rdson(@Vgs=10V) 0....
Description
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N R N-CHANNEL MOSFET
JCS840
MAIN CHARACTERISTICS
Package
ID 8 A VDSS 500 V Rdson(@Vgs=10V) 0.8 Ω Qg 59 nC
z z z UPS
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
z zCrssB B ( 35pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow CrssB B (typical 35pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JCS840S-O-S-N-B JCS840S
JCS840B-O-B-N-B JCS840B
JCS840C-O-C-N-B JCS840C
JCS840F-O-F-N-B
JCS840F
Package TO-263 TO-262 TO-220C TO-220MF
Halogen Free NO NO NO NO
Packaging Tube Tube Tube Tube
Device Weight 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ)
:201007A
1/12
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R
ABSOLUTE RATINGS (Tc=25℃)
JCS840
Parameter
Symbol
Value JCS840S/B/C JCS840F
- Drain-Source Voltage
VDSSB B
500
Drain Current -continuous
IDB T=25℃
B
T=100℃
8.0 5.1
8.0* 5.1*
( 1)
Drain Current - pulse
(note 1)
IDMB B
32 32*
Gate-Source Voltage
VGSSB B
±30
( 2)
Single Pulsed Avalanche Energy(note EASB B 2)
320
( 1) Avalanche Current(note 1)
IARB B
8.0
( 1) Repetitive Avalanche Current(note 1)
EARB B
13.4
(
3)
dv/dt
3.5
Peak Diode Recovery dv/dt(note 3)
Power Dissipation
PDB T =25℃CB B B -Derate above
134 1.08
44 0.35
25℃
Operating and Storage Temperature
T ,TJ STGB B
BB
Range
-55~+150
Maximum Lead Tem...
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