JCS3N25CT

N R N-CHANNEL MOSFET JCS3N25T MAIN CHARACTERISTICS Package ID 3 A VDSS 250 V Rdson（@Vgs=10V） 1.74Ω Qg 4.4 nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 4.5pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 4.5pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS3N25VT-O-V-N-B JCS3N25RT-O-R-N-B JCS3N25RT-O-R-N-A JCS3N25CT-O-C-N-B JCS3N25FT-O-F-N-B JCS3N25VT JCS3N25RT JCS3N25RT JCS3N25CT JCS3N25FT Package IPAK DPAK DPAK TO-220C TO-220MF Halogen Free NO NO NO NO NO Packaging Tube Tube Brede Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) ：201302C 1/12 R JCS3N25T ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value JCS3N25VT/RT/CT JCS3N25FT － Drain-Source Voltage VDSS 250 250 Drain Current -continuous ID T=25℃ T=100℃ 3 1.98 3* 1.55* （ 1） Drain Current - pulse （note 1） IDM 12 12* Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy （note 2） EAS 305 （ 1） Avalanche Current（note 1） IAR 3 （ 1） Repetitive Avalanche Energy （note 1） EAR 10.1 4.1 （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt 4.5 Power Dissipation PD TC=25℃ -Derate above 25℃ 101 0.81 41 0.33 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum...